| Literature DB >> 34206394 |
Aile Tamm1, Helle-Mai Piirsoo1, Taivo Jõgiaas1, Aivar Tarre1, Joosep Link2, Raivo Stern2, Kaupo Kukli1.
Abstract
Double layered stacks of ZrO2 and SnO2 films, aiming at the synthesis of thin magnetic and elastic material layers, were grown by atomic layer deposition to thicknesses in the range of 20-25 nm at 300 °C from ZrCl4, SnI4, H2O, and O3 as precursors. The as-deposited nanostructures consisted of a metastable tetragonal polymorph of ZrO2, and a stable tetragonal phase of SnO2, with complementary minor reflections from the orthorhombic polymorph of SnO2. The hardness and elastic modulus of the stacks depended on the order of the constituent oxide films, reaching 15 and 171 GPa, respectively, in the case of top SnO2 layers. Nonlinear saturative magnetization could be induced in the stacks with coercive fields up to 130 Oe.Entities:
Keywords: atomic layer deposition; magnetization; nanoindentation; nanostructures; tin dioxide; zirconium dioxide
Year: 2021 PMID: 34206394 DOI: 10.3390/nano11071633
Source DB: PubMed Journal: Nanomaterials (Basel) ISSN: 2079-4991 Impact factor: 5.076