| Literature DB >> 34138280 |
Ali Zavabeti1,2,3, Azmira Jannat4, Li Zhong5,4, Azhar Ali Haidry5, Zhengjun Yao5, Jian Zhen Ou6.
Abstract
Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.Entities:
Keywords: Defect engineering; Electronics; Large-area; Optoelectronics; Two-dimensional materials
Year: 2020 PMID: 34138280 DOI: 10.1007/s40820-020-0402-x
Source DB: PubMed Journal: Nanomicro Lett ISSN: 2150-5551