Literature DB >> 34112727

Interfacial ferroelectricity by van der Waals sliding.

M Vizner Stern1, Y Waschitz1, W Cao2, I Nevo1, K Watanabe3, T Taniguchi3, E Sela1, M Urbakh2, O Hod2, M Ben Shalom4.   

Abstract

Despite their partial ionic nature, many layered diatomic crystals avoid internal electric polarization by forming a centrosymmetric lattice at their optimal van-der-Waals stacking. Here, we report a stable ferroelectric order emerging at the interface between two naturally-grown flakes of hexagonal-boron-nitride, which are stacked together in a metastable non-centrosymmetric parallel orientation. We observe alternating domains of inverted normal polarization, caused by a lateral shift of one lattice site between the domains. Reversible polarization switching coupled to lateral sliding is achieved by scanning a biased tip above the surface. Our calculations trace the origin of the phenomenon to a subtle interplay between charge redistribution and ionic displacement, and provide intuitive insights to explore the interfacial polarization and its unique "slidetronics" switching mechanism.
Copyright © 2021, American Association for the Advancement of Science.

Entities:  

Year:  2021        PMID: 34112727     DOI: 10.1126/science.abe8177

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  8 in total

1.  Sliding ferroelectricity in 2D van der Waals materials: Related physics and future opportunities.

Authors:  Menghao Wu; Ju Li
Journal:  Proc Natl Acad Sci U S A       Date:  2021-12-14       Impact factor: 12.779

2.  Moiré Modulation of Van Der Waals Potential in Twisted Hexagonal Boron Nitride.

Authors:  Stefano Chiodini; James Kerfoot; Giacomo Venturi; Sandro Mignuzzi; Evgeny M Alexeev; Bárbara Teixeira Rosa; Sefaattin Tongay; Takashi Taniguchi; Kenji Watanabe; Andrea C Ferrari; Antonio Ambrosio
Journal:  ACS Nano       Date:  2022-04-29       Impact factor: 18.027

3.  A Scalable Network Model for Electrically Tunable Ferroelectric Domain Structure in Twistronic Bilayers of Two-Dimensional Semiconductors.

Authors:  Vladimir V Enaldiev; Fabio Ferreira; Vladimir I Fal'ko
Journal:  Nano Lett       Date:  2022-02-07       Impact factor: 12.262

Review 4.  Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices.

Authors:  Suman Kumar Chakraborty; Baisali Kundu; Biswajeet Nayak; Saroj Prasad Dash; Prasana Kumar Sahoo
Journal:  iScience       Date:  2022-02-19

5.  Interfacial ferroelectricity in marginally twisted 2D semiconductors.

Authors:  Astrid Weston; Eli G Castanon; Vladimir Enaldiev; Fábio Ferreira; Shubhadeep Bhattacharjee; Shuigang Xu; Héctor Corte-León; Zefei Wu; Nicholas Clark; Alex Summerfield; Teruo Hashimoto; Yunze Gao; Wendong Wang; Matthew Hamer; Harriet Read; Laura Fumagalli; Andrey V Kretinin; Sarah J Haigh; Olga Kazakova; A K Geim; Vladimir I Fal'ko; Roman Gorbachev
Journal:  Nat Nanotechnol       Date:  2022-02-24       Impact factor: 40.523

6.  Interlayer Registry Index of Layered Transition Metal Dichalcogenides.

Authors:  Wei Cao; Oded Hod; Michael Urbakh
Journal:  J Phys Chem Lett       Date:  2022-04-08       Impact factor: 6.888

7.  Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system.

Authors:  Yan Sun; Shuting Xu; Zheqi Xu; Jiamin Tian; Mengmeng Bai; Zhiying Qi; Yue Niu; Hein Htet Aung; Xiaolu Xiong; Junfeng Han; Cuicui Lu; Jianbo Yin; Sheng Wang; Qing Chen; Reshef Tenne; Alla Zak; Yao Guo
Journal:  Nat Commun       Date:  2022-09-14       Impact factor: 17.694

8.  Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite.

Authors:  Mengjiao Han; Cong Wang; Kangdi Niu; Qishuo Yang; Chuanshou Wang; Xi Zhang; Junfeng Dai; Yujia Wang; Xiuliang Ma; Junling Wang; Lixing Kang; Wei Ji; Junhao Lin
Journal:  Nat Commun       Date:  2022-10-06       Impact factor: 17.694

  8 in total

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