| Literature DB >> 34095782 |
Motoshi Nakamura1,2, Keishi Tada3, Takumi Kinoshita3, Takeru Bessho2, Chie Nishiyama2, Issei Takenaka1, Yoshinori Kimoto1, Yuta Higashino1, Hiroki Sugimoto1, Hiroshi Segawa2,3.
Abstract
The highest theoretical efficiency of double junction solar cells is predicted for architectures with the bottom cell bandgap (E g ) of approximately 0.9-1.0 eV, which is lower than that of a typical Si cell (1.1 eV). Cu(In,Ga)(Se,S)2 (CIGS) solar cells exhibit a tunable E g depending on their elemental composition and depth profile. In this study, various CIGS solar cells with E g ranging from 1.02 to 1.14 eV are prepared and a spectrum splitting system is used to experimentally demonstrate the effect of using lower-E g cells as the bottom cell of two-junction solar cells. The four-terminal tandem cell configuration fabricated using a mixed-halide perovskite top cell (E g = 1.59 eV; stand-alone efficiency = 21.0%) and CIGS bottom cell (E g = 1.02 eV; stand-alone efficiency = 21.5%) with a 775-nm spectral splitting mirror exhibits an efficiency of 28.0% at the aperture area of 1 cm2.Entities:
Keywords: Energy Materials; Inorganic Materials; Materials Application; Materials Science; Optical Materials
Year: 2020 PMID: 34095782 PMCID: PMC8164171 DOI: 10.1016/j.isci.2020.101817
Source DB: PubMed Journal: iScience ISSN: 2589-0042
Figure 1Schematics of Fabricated Tandem Solar Cells
(A) PVK top cell.
(B) CIGS bottom cell.
(C) Spectrum splitting system with a dichroic mirror.
Figure 2Device Characteristics of the PVK and CIGS Cells Measured Under the Standard 1-sun Irradiation Condition without Using a Dichroic Mirror
(A) Normalized EQE and -d(EQE)/dλ curve of PVK cell.
(B) Forward and reverse scanned J-V curves of PVK cell.
(C) EQE and -d(EQE)/dλ curves of CIGS cells.
(D) Forward scanned J-V curves of CIGS cells.
Parameters of the PVK and CIGS Solar Cells Extracted from the J-V Curves and EQE Spectra in Figure 2
| PCE (%) | FF (%) | |||
|---|---|---|---|---|
| PVK-Rvs. | 21.0 | 22.7 | 1,181.8 | 78.1 |
| PVK-Frd. | 20.3 | 22.6 | 1,173.8 | 76.5 |
| CIGS (Eg = 1.14 eV) | 21.6 | 39.1 | 728.8 | 75.7 |
| CIGS (Eg = 1.11 eV) | 21.8 | 39.8 | 715.1 | 76.5 |
| CIGS (Eg = 1.08 eV) | 21.5 | 41.0 | 708.9 | 74.1 |
| CIGS (Eg = 1.02 eV) | 21.5 | 43.6 | 659.0 | 74.8 |
Figure 3Device Characteristics of the PVK Top Cell and CIGS Bottom Cells Measured in Presence of the Dichroic Mirror with a Splitting Wavelength of 775 nm
(A) Forward and reverse scanned J-V curves of PVK top cell.
(B) J-V curves of CIGS cells with various bandgaps.
(C) EQE of the PVK top cell and CIGS bottom cell with Eg of 1.02 eV.
Solar Cell Parameters of the PVK Top Cell and CIGS Bottom Cells Extracted from the J-V Curves and EQE Spectra in Figure 3. The highest 4-T tandem cell efficiency was obtained when the CIGS bottom cell with Eg of 1.02 eV was used.
| PCE (%) | FF (%) | |||
|---|---|---|---|---|
| PVK-775 nm-Rev. | 21.0 | 1,182.0 | 77.2 | |
| PVK-775 nm-Frd. | 18.3 | 20.9 | 1,172.8 | 74.6 |
| CIGS (Eg = 1.14 eV) | 7.5 | 14.5 | 690.9 | 74.9 |
| CIGS (Eg = 1.11 eV) | 7.9 | 15.3 | 682.7 | 75.3 |
| CIGS (Eg = 1.08 eV) | 8.6 | 16.3 | 678.9 | 77.5 |
| CIGS (Eg = 1.02 eV) | 18.4 | 637.0 | 75.8 | |
| 4-T tandem (best) | – | – | – |
Figure 4Relation between the Solar Cell Parameters and Bottom Cell Eg
(A) Experimental results for the CIGS bottom cells measured with the dichroic mirror in the spectrum splitting system.
(B) A detailed balanced calculation of the device performance of the bottom cell when the top cell Eg is fixed at 1.6 eV.