| Literature DB >> 34094431 |
Tanguy Jousselin-Oba1, Masashi Mamada2, Atsushi Okazawa3, Jérome Marrot1, Takayuki Ishida4, Chihaya Adachi2,5, Abderrahim Yassar6, Michel Frigoli1.
Abstract
Biradicaloid compounds with an open-shell ground state have been the subject of intense research in the past decade. Although diindenoacenes are one of the most developed families, only a few examples have been reported as active layers in organic field-effect transistors (OFETs) with a charge mobility of around 10-3 cm2 V-1 s-1 due to a steric disadvantage of the mesityl group to kinetically stabilize compounds. Herein, we disclose our efforts to improve the charge transport of the diindenoacene family based on hexahydro-diindenopyrene (HDIP) derivatives with different annelation modes for which the most reactive position has been functionalized with (triisopropylsilyl)ethynyl (TIPS) groups. All the HDIP derivatives show remarkably higher stability than that of TIPS-pentacene, enduring for 2 days to more than 30 days, which depends on the oxidation potential, the contribution of the singlet biradical form in the ground state and the annelation mode. The annelation mode affects not only the band gap and the biradical character (y 0) but also the value of the singlet-triplet energy gap (ΔE S-T) that does not follow the reverse trend of y 0. A method based on comparison between experimental and theoretical bond lengths has been disclosed to estimate y 0 and shows that y 0 computed at the projected unrestricted Hartree-Fock (PUHF) level is the most relevant among those reported by all other methods. Thanks to their high stability, thin-film OFETs were successfully fabricated. Well balanced ambipolar transport was obtained in the order of 10-3 cm2 V-1 s-1 in the bottom-gate/top-contact configuration, and unipolar transport in the top-gate/bottom-contact configuration was obtained in the order of 10-1 cm2 V-1 s-1 which is the highest value obtained for biradical compounds with a diindenoacene skeleton. This journal is © The Royal Society of Chemistry.Entities:
Year: 2020 PMID: 34094431 PMCID: PMC8162832 DOI: 10.1039/d0sc04583g
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Chart 1Different PHs with their biradical character at the PUHF level of theory and experimental ΔES–T gaps.
Chart 2Target molecules hexahydro-diindenopyrene (HDIP), linear-dibenzo-HDIP (linear-HDIP), syn-dibenzo-HDIP (syn-HDIP) and anti-dibenzo-HDIP (anti-HDIP). The bond orders at the fusion point (blue lines) are 1.50, 1.33, 1.66 and 1.66 for HDIP, linear-HDIP, syn-HDIP and anti-HDIP, respectively.[21]
Scheme 1Synthetic path of HDIB derivatives and the proposed mechanism of the formation of an alcohol by-product.
Fig. 1(a) Absorption in toluene and (b) cyclic voltammetry of HDIP derivatives in chlorobenzene.
Fig. 2VT 1H NMR spectra in o-DCB-d4 of (a) anti-HDIP and (b) linear-HDIP and the calculated spin density of the triplet state.
Fig. 3X-ray structures and packing of HDIP derivatives.
Calculations of the biradical character (y0), apical bond length b, singlet–triplet energy gap (ΔES–T) in kcal mol−1, and experimental electrochemical energy gap in eV
| Compounds |
| Bond | Δ |
|
|---|---|---|---|---|
| Native FF | 0.48 | 1.382 | −9.69 | — |
| FF | 0.58 | 1.404 | −6.01 | — |
|
| 0.59 | 1.403 | −5.73 | — |
|
| 0.64 | 1.406 | −5.84 | — |
|
| 0.67 | 1.417 | −5.11 | — |
| Native HDIP | 0.46 | 1.382 | −11.70 | — |
| HDIP | 0.56 | 1.409/1.406(2)exp | −7.26 | 1.59 |
|
| 0.58 | 1.406/1.403(3)exp | −6.52 | 1.55 |
|
| 0.59 | 1.407/1.400(2)exp | −8.49 | 1.49 |
|
| 0.65 | 1.423/1.419(2)exp | −6.49 | 1.37 |
|
| 0.61 | — | −7.48 (−8.0) | 1.50 |
|
| 0.66 | — | −6.84 (−6.9) | 1.50 |
All the compounds are functionalized with TMS-ethynyl groups and accept native compounds.
Calculated at the PUHF/6-31+G(d,p) level of theory in Å.
At the R-B3LYP/6-311G(d,p) level.
At the B3LYP/6-311G(d,p) level in kcal mol−1.
Electrochemical energy gap in eV.
Experimental value taken from ref. 14.
Optical band gap.
Taken from ref. 14.
Fig. 4Bond lengths of CS and BS solutions calculated at B3LYP (left) and CAM-B3LYP (right) levels for HDIP.
Fig. 5NICS (1.7)πzz values in ppm inside the rings for CS (blue) and BS (red) solutions at the CAM-B3LYP level for FF derivatives with the TMS-ethynyl group.
Fig. 6Odd electron density maps for HDIP derivatives, calculated at the LC-UBLYP/6-311+G(d,p) level with a contour value of 0.001 a.u.
Fig. 7Change of UV/Vis absorption (followed at their own λmax) over time in toluene (26.6 μm) of HDIP derivatives.
Fig. 8OFET devices of HDIP derivatives. (a) Transfer and (b) output characteristics of a BG/TC device with a drop-cast anti-HDIP. (c) Transfer and (d) output characteristics of TG/BC devices with a drop-cast HDIP (black lines), linear-HDIP (red lines), and anti-HDIP (magenta lines). L/W = ca. 50/2000 μm.
OFET characteristics of HDIP derivatives
| Compd | Struct. |
|
|
|
|
|---|---|---|---|---|---|
| HDIP | BG/TC | 0.041 | −17 | — | |
|
| BG/TC | 1.9 × 10−3 | −32 | — | |
|
| BG/TC | 1.5 × 10−4 | −51 | 4.0 × 10−5 | 53 |
|
| BG/TC | 4.5 × 10−3 | −38 | 1.1 × 10−3 | 67 |
| HDIP | TG/BC | 0.40 | −20 | — | |
|
| TG/BC | 0.30 | −18 | — | |
|
| TG/BC | 1.3 × 10−3 | −34 | 8.6 × 10−4 | 70 |
|
| TG/BC | 0.20 | −14 | — | |
BG/TC is bottom-gate/top-contact, TG/BC is top-gate/bottom-contact.