| Literature DB >> 34085785 |
Frederick Osei-Tutu Agyapong-Fordjour1,2, Seok Joon Yun3, Hyung-Jin Kim2, Wooseon Choi1, Balakrishnan Kirubasankar4, Soo Ho Choi3, Laud Anim Adofo1, Stephen Boandoh3, Yong In Kim1, Soo Min Kim4, Young-Min Kim1,3, Young Hee Lee1,3, Young-Kyu Han2, Ki Kang Kim1,3.
Abstract
Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, metallic vanadium sulfide (VSn ) nanodispersed in a semiconducting MoS2 film (V-MoS2 ) is proposed as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V and overpotential of -0.08 V at a current density of 10 mA cm-2 with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study provides insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution.Entities:
Keywords: first-principles calculations; hydrogen evolution; molybdenum disulfide; transition metal dichalcogenides; vanadium disulfide
Year: 2021 PMID: 34085785 DOI: 10.1002/advs.202003709
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 16.806