| Literature DB >> 34064543 |
Sergio Moreno1, Joan Canals1, Victor Moro1, Nil Franch1, Anna Vilà1,2, Albert Romano-Rodriguez1,2, Joan Daniel Prades1,2, Daria D Bezshlyakh3, Andreas Waag3, Katarzyna Kluczyk-Korch4,5, Matthias Auf der Maur4, Aldo Di Carlo4,6, Sigurd Krieger7, Silvana Geleff7, Angel Diéguez1,2.
Abstract
Recent research into miniaturized illumination sources has prompted the development of alternative microscopy techniques. Although they are still being explored, emerging nano-light-emitting-diode (nano-LED) technologies show promise in approaching the optical resolution limit in a more feasible manner. This work presents the exploration of their capabilities with two different prototypes. In the first version, a resolution of less than 1 µm was shown thanks to a prototype based on an optically downscaled LED using an LED scanning transmission optical microscopy (STOM) technique. This research demonstrates how this technique can be used to improve STOM images by oversampling the acquisition. The second STOM-based microscope was fabricated with a 200 nm GaN LED. This demonstrates the possibilities for the miniaturization of on-chip-based microscopes.Entities:
Keywords: CMOS sensor; miniaturization; nano-LED; nanopositioners; optical downscaling
Year: 2021 PMID: 34064543 PMCID: PMC8151575 DOI: 10.3390/s21103305
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1Schematic diagram of electronic scanning transmission optical microscopy. (a) Perspective view. (b) Side view.
Figure 2(a) Setup of the scanning transmission optical microscope with optical downscaling. (b) Schematic diagrams of the STOM with optical downscaling in different operating modes. (b1) NIM mode. (b2) Lensless mode.
Figure 3STOM images of an 800 nm-wide squared pattern using a diffracted spot of 750 nm with an objective of x60, with steps of (a) 750, (b) 400, (c) 200, and (d) 100 nm.
Figure 4The measured ESF from a sharpened line pattern with steps of 400, 200, and 100 nm. The LSF has been fitted and illustrated with a solid line and has been normalized to unity. The peaks at the top of the sample profile correspond to the diffraction of the object. The raw curves correspond to the same sharp profile, but for easy visual understanding, they have been divided along the X-axis. The resolution calculated from the LSF is shown in the inset.
Figure 5(a) Raw image in lensless mode of the fly wing sample. The refocusing images for the selected region of (b,c) corresponding to the height difference of 2 µm at 17 and 19 µm, respectively.
Figure 6Human lung fibroblasts observed with a (a) confocal laser scanning microscope (CLSM) and (b) STOM microscope using a diffracted spot of 750 nm and a step size of 600 nm.
Figure 7(a) Prototype of the mechanical-based microscope in comparison with a 20-cent coin. (b) Placement of the sample on the LED array for scanning with the mechanical-based STOM microscope. The operating LED had a size of 200 nm and emitted at a wavelength of 465 nm.
Figure 8(a) STOM image obtained with an LED size of 200 nm biased at 800 nA and with a pitch of 200 nm, superimposed on the standard optical microscopy image at x60 of an EBL matrix of 1.6 µm squares. (b) ESF and LSF from a sharpened line with steps of 200 nm calculated in the region marked in (a). Both functions were fitted and normalized to unity, and they are illustrated with dashed and solid lines, respectively.
Figure 9Scheme of the LED model. (a) Perspective. (b) Cross section along an LED line (scale is not respected). The dipole source was placed at h1 = 300 nm under the GaN surface. (c) Logarithm of absolute value of power intensity distribution on the XY plane. The cross section was taken at z = 975 nm (i.e., 100 nm above the top surface of the LED). The black lines indicate the field values equal to half of the maximum of the signal. (d) Logarithm of absolute value of power intensity distribution in the XZ plane. The cross section was taken at x = 1800 nm.
Figure 10Full-width at half-maximum as a function of the vertical coordinate z. Dashed lines indicate the material interfaces inside the LED structure. The p-GaN layer’s thickness is equal to 300 nm.