Literature DB >> 33970600

Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers.

Xutao Zhang1, Ruixuan Yi1, Nikita Gagrani2, Ziyuan Li2, Fanlu Zhang2, Xuetao Gan1, Xiaomei Yao3,4, Xiaoming Yuan5, Naiyin Wang2, Jianlin Zhao1, Pingping Chen3,4, Wei Lu3,4,6, Lan Fu2,7, Hark Hoe Tan2,7, Chennupati Jagadish2,7.   

Abstract

We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.

Keywords:  low threshold; nanowire laser; near-infrared; quantum disks; single-mode

Year:  2021        PMID: 33970600     DOI: 10.1021/acsnano.1c02425

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  2 in total

1.  Self-frequency-conversion nanowire lasers.

Authors:  Ruixuan Yi; Xutao Zhang; Chen Li; Bijun Zhao; Jing Wang; Zhiwen Li; Xuetao Gan; Li Li; Ziyuan Li; Fanlu Zhang; Liang Fang; Naiyin Wang; Pingping Chen; Wei Lu; Lan Fu; Jianlin Zhao; Hark Hoe Tan; Chennupati Jagadish
Journal:  Light Sci Appl       Date:  2022-04-29       Impact factor: 17.782

2.  Benchtop Electrochemical Growth and Controlled Alloying of Polycrystalline In x Ga1-x As Thin Films.

Authors:  Zachary R Lindsey; Malachi West; Peter Jacobson; John Robert Ray
Journal:  Cryst Growth Des       Date:  2022-06-07       Impact factor: 4.010

  2 in total

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