| Literature DB >> 33968152 |
Abstract
BACKGROUND: To solve current issues using big data, solve current issues related to the semiconductor and electronics industry, I tried to establish the data for each toxicity mechanism for adverse outcome pathway (AOP) for the exposure.Entities:
Keywords: Adverse outcome pathway; Application; Chemicals; Semiconductor
Year: 2021 PMID: 33968152 PMCID: PMC8097676 DOI: 10.1007/s13273-021-00139-4
Source DB: PubMed Journal: Mol Cell Toxicol ISSN: 1738-642X Impact factor: 1.080
Fig. 1Development of AOP DB performed by searching additional data with blue color. More data can be found in the attached Tables S1 and S2
Chemicals linked to diseases in each process
| Chemical Name | CAS No | Process in semiconductor | Etc |
|---|---|---|---|
| 1-Methoxy-2-propyl acetate | 108-65-6 | Wafer processing, Chip assembly, Photo (PR solvent) | Common to all processes |
| Acetone | 67-64-1 | Overall process, Wafer processing, Chip assembly, Mold, Printing, Chip adhesion | |
| Cresol | o-Cresol 95-48-7 p-Cresol 106-44-5 m-Cresol 108-39-4 | Wafer processing, Chip assembly, Mold, Photo (PR solvent), Mold | |
| Ethanol | 64-17-5 | Wafer processing, Chip assembly, Photo (PR solvent), Overall assembly (Cleaning solution) | |
| Hydrogen peroxide | 7722-84-1 | Wafer processing, Chip assembly, Chip adhesion (liquid), Wet etching, wet cleaning, Plating | |
| Isopropyl alcohol | 67-63-0 | Wafer processing, Chip assembly, Photo (PR solvent), Cleaning solution (PM etc.), Maintenance, Washing, Diffusion (liquid, Plating etc.) | |
| 123-86-4 | Wafer processing, Chip assembly, Photo (PR solvent), Testing etc | ||
| Nitric acid | 7697-37-2 | Wafer processing, Chip assembly, Wet etching, Grinding, Wet cleaning, Plating | |
| Potassium hydroxide | 1310-58-3 | Wafer processing, Chip assembly, BSG (Grinding), Plating | |
| Sulfuric acid | 7664-93-9 | Wafer processing, Chip assembly, Wet etching, Wet cleaning, Plating | |
| Tetramethyl ammonium hydroxide | 75-59-2 10,424-66-5 (Trihydrate) 10,424-65-4 (Pentahydrate) | Wafer processing, Chip assembly, Photo (developer), Rear Grinding | |
| 1-Methoxy-2-propanol | 107-98-2 | Wafer processing, Photo (PR solvent) | Specific to the wafer processing process |
| 2-(2-Aminoethoxy)-ethanol | 929-06-6 | Wafer processing | |
| 2-Ethoxyethanol | 110-80-5 | Wafer processing, Photo (PR solvent) | |
| 2-Heptanone | 110-43-0 | Wafer processing, Photo (PR solvent) | |
| Catechol | 120-80-9 | Wafer processing, Photo (PR removal) | |
| Dibutyl ether | 142-96-1 | Wafer processing, CVD | |
| Ethylene glycol | 107-21-1 | Wafer processing, Dry etching, CVD, Ion implantation (Past 6 inches) | |
| Gamma-Butyrolactone | 96-48-0 | Wafer processing, Photo | |
| Methyl-2-hydroxy isobutyrate | 2110-78-3 | Wafer processing | |
| Methyl-3-methoxy propionate | 3852-09-3 | Wafer processing, Photo (PR solvent) | |
| Nitric oxide (Nitrogen monoxide) | 10,102-43-9 | Wafer processing, Diffusion | |
| Phosphoric acid | 7664-38-2 | Wafer processing, Wet etching | |
| Trimethyl phosphate | 512-56-1 | Wafer processing, CVD | |
| 2-(2-Ethoxyethoxy) ethanol | 111-90-0 | Chip assembly, Mold | Specific to the chip assembly process |
| 2-Butoxyethanol | 111-76-2 | Overall Chip assembly | |
| Acetaldehyde | 75-07-0 | Mold, Chip assembly | |
| Acetic acid | 64-19-7 | Washing, Wet etching, Etching (Wet, liquid), Wafer processing, Washing (Diffusion etc.), Wet etching | |
| Ethyl acetate | 141-78-6 | Chip assembly, Chip adhesion, Mold, Solder ball attachment, Printing (Ink marking) Cleaning solution etc | |
| Glycerol | 56-81-5 | Solder ball attachment, Chip assembly | |
| Heptane | 142-82-5 | Chip assembly, Mold, Photo (developer) etc | |
| Methanesulfonic acid | 75-75-2 | Chip assembly, Plating | |
| Methyl isobutyl ketone | 108-10-1 | Chip assembly, Mold etc | |
| 872-50-4 | Chip assembly, Photo (PR removal, developer) | ||
| Phenol | 108-95-2 | Chip assembly, Mold, etc | |
| Piperazine | 110-85-0 | Chip assembly, Rear grinding | |
| Polyethylene polypropylene glycol | 9003-11-6 | Chip assembly | |
| Tetrachloroethylene | 127-18-4 | Mold, Chip adhesion, Chip assembly, Testing | |
| Tetrahydrofuran | 109-99-9 | Chip assembly, Rear grinding, Solder ball attachment, Mold, etc | |
| Tin(II) methanesulfonate | 53,408-94-9 | Chip assembly, Plating |
The 25 chemicals including 1-Methoxy-2-propanol are in wafer processing, 26 chemicals including 1-Methoxy-2-propyl acetate are in chip assembly
Fig. 2Linkage with blood, histopathology, lesions, organs, and individual diseases. *Sourced from The Human Protein Atlas, https://www.proteinatlas.org/ Adapted with permission
Screening of diagnostic biomarkers in Cancer network viewer
| hsa05200 Pathways in cancer— |
hsa:183 AGT; angiotensinogen hsa:207 AKT1; AKT serine/threonine kinase 1 hsa:208 AKT2; AKT serine/threonine kinase 2 hsa:572 BAD; BCL2 associated agonist of cell death hsa:598 BCL2L1; BCL2 like 1 hsa:841 CASP8; caspase 8 hsa:842 CASP9; caspase 9 hsa:894 CCND2; cyclin D2 hsa:898 CCNE1; cyclin E1 hsa:1026 CDKN1A; cyclin dependent kinase inhibitor 1A hsa:1027 CDKN1B; cyclin dependent kinase inhibitor 1B hsa:1499 CTNNB1; catenin beta 1 hsa:1869 E2F1; E2F transcription factor 1 hsa:1906 EDN1; endothelin 1 hsa:1910 EDNRB; endothelin receptor type B hsa:2113 ETS1; ETS proto-oncogene 1, transcription factor hsa:2308 FOXO1; forkhead box O1 hsa:2950 GSTP1; glutathione S-transferase pi 1 hsa:3091 HIF1A; hypoxia inducible factor 1 subunit alpha hsa:7184 HSP90B1; heat shock protein 90 beta family member 1 hsa:3458 IFNG; interferon gamma hsa:3596 IL13; interleukin 13 hsa:3565 IL4; interleukin 4 hsa:3725 JUN; Jun proto-oncogene, AP-1 transcription factor subunit hsa:3845 KRAS; KRAS proto-oncogene, GTPase hsa:5604 MAP2K1; mitogen-activated protein kinase kinase 1 hsa:4790 NFKB1; nuclear factor kappa B subunit 1 hsa:4792 NFKBIA; NFKB inhibitor alpha hsa:4843 NOS2; nitric oxide synthase 2 hsa:1728 NQO1; NAD(P)H quinone dehydrogenase 1 hsa:5155 PDGFB; platelet derived growth factor subunit B hsa:5337 PLD1; phospholipase D1 hsa:5338 PLD2; phospholipase D2 hsa:5371 PML; PML nuclear body scaffold hsa:5578 PRKCA; protein kinase C alpha hsa:5970 RELA; RELA proto-oncogene, NF-kB subunit hsa:7157 TP53; tumor protein p53 |
| hsa05200 Pathways in cancer— |
hsa:183 AGT; angiotensinogen hsa:207 AKT1; AKT serine/threonine kinase 1 hsa:208 AKT2; AKT serine/threonine kinase 2 hsa:367 AR; androgen receptor hsa:572 BAD; BCL2 associated agonist of cell death hsa:581 BAX; BCL2 associated X, apoptosis regulator hsa:596 BCL2; BCL2 apoptosis regulator hsa:598 BCL2L1; BCL2 like 1 hsa:836 CASP3; caspase 3 hsa:840 CASP7; caspase 7 hsa:841 CASP8; caspase 8 hsa:842 CASP9; caspase 9 hsa:894 CCND2; cyclin D2 hsa:898 CCNE1; cyclin E1 hsa:1026 CDKN1A; cyclin dependent kinase inhibitor 1A hsa:1027 CDKN1B; cyclin dependent kinase inhibitor 1B hsa:1499 CTNNB1; catenin beta 1 hsa:3576 CXCL8; C-X-C motif chemokine ligand 8 hsa:1869 E2F1; E2F transcription factor 1 hsa:1906 EDN1; endothelin 1 hsa:1910 EDNRB; endothelin receptor type B hsa:1950 EGF; epidermal growth factor hsa:2099 ESR1; estrogen receptor 1 hsa:2113 ETS1; ETS proto-oncogene 1, transcription factor hsa:2353 FOS; Fos proto-oncogene, AP-1 transcription factor subunit hsa:2308 FOXO1; forkhead box O1 hsa:2950 GSTP1; glutathione S-transferase pi 1 hsa:3091 HIF1A; hypoxia inducible factor 1 subunit alpha hsa:3162 HMOX1; heme oxygenase 1 hsa:7184 HSP90B1; heat shock protein 90 beta family member 1 hsa:3458 IFNG; interferon gamma hsa:3596 IL13; interleukin 13 hsa:3565 IL4; interleukin 4 hsa:3569 IL6; interleukin 6 hsa:3725 JUN; Jun proto-oncogene, AP-1 transcription factor subunit hsa:3845 KRAS; KRAS proto-oncogene, GTPase hsa:5604 MAP2K1; mitogen-activated protein kinase kinase 1 hsa:5594 MAPK1; mitogen-activated protein kinase 1 hsa:5595 MAPK3; mitogen-activated protein kinase 3 hsa:4780 NFE2L2; nuclear factor, erythroid 2 like 2 hsa:4790 NFKB1; nuclear factor kappa B subunit 1 hsa:4792 NFKBIA; NFKB inhibitor alpha hsa:4843 NOS2; nitric oxide synthase 2 hsa:1728 NQO1; NAD(P)H quinone dehydrogenase 1 hsa:5155 PDGFB; platelet derived growth factor subunit B hsa:5337 PLD1; phospholipase D1 hsa:5338 PLD2; phospholipase D2 hsa:5371 PML; PML nuclear body scaffold hsa:5468 PPARG; peroxisome proliferator activated receptor gamma hsa:5578 PRKCA; protein kinase C alpha hsa:5743 PTGS2; prostaglandin-endoperoxide synthase 2 hsa:5970 RELA; RELA proto-oncogene, NF-kB subunit hsa:7040 TGFB1; transforming growth factor beta 1 hsa:7157 TP53; tumor protein p53 |
Fig. 3Selection of the most related pathways to all diagnostic biomarkers, see https://www.genome.jp/kegg-bin/network_viewer. *Sourced from KEGG (Kyoto Encyclopedia of Genes and Genomes), https://www.kegg.jp/ Adapted with permission
Results of verification of occupational disease-specific biomarkers
| Name | Disease | Direct evidencea | Inference score | Number of references |
|---|---|---|---|---|
| AHR | Breast neoplasms | M | 134.87 | 404 |
| BCL2 | Breast neoplasms | M | 307.33 | 742 |
| PARP1 | Breast neoplasms | M | 285 | 701 |
| TNF | Breast neoplasms | M | 254.24 | 755 |
| AKT1 | Breast neoplasms | M | 250.16 | 704 |
| CASP8 | Breast neoplasms | M | 244.74 | 680 |
| IFNG | Breast neoplasms | M | 217.06 | 619 |
| SOD2 | Breast neoplasms | M | 213.22 | 691 |
| CXCL8 | Breast neoplasms | M | 208.81 | 604 |
| NFKBIA | Breast neoplasms | M | 204.82 | 647 |
| CAT | Breast neoplasms | M | 198.96 | 658 |
| GSTP1 | Breast neoplasms | M | 179.83 | 610 |
aDirect evidence “M”: this means a direct evidence for diagnostic markers in the CTD DB
Analysis of occupational disease-specific AOPs
| AOPs | MIEs (No.) | KEs (No.) | AOs (No.) |
|---|---|---|---|
| AOP 200 Estrogen receptor activation leading to breast cancer | 1181 | 1182 1183 177 1088 1187 1188 1189 1190 1191 1192 1194 1195 1196 1197 1198 1213 1239 1240 1241 1242 | 1193 |
| AOP 293 Increased DNA damage leading to increased risk of breast cancer | 1194 | 1492 1493 1632 1494 1182 | 185 1192 1193 |
| AOP 294 Increased reactive oxygen and nitrogen species (RONS) leading to increased risk of breast cancer | 1632 | 1182 1492 1493 1494 | 1194 185 1192 1193 |
| AOP 66 Modulation of Adult Leydig Cell Function Subsequent Glucocorticoid Activation in the Fetal Testis | 653 654 | 655 656 657 | 505 |
| AOP 67 Modulation of Adult Leydig Cell Function Subsequent to Estradiaol Activation in the Fetal Testis | 658 659 | 655 660 656 | 505 |
| AOP 68 Modulation of Adult Leydig Cell Function Subsequent to Alterations in the Fetal Testis Protome | 661 | 655 657 656 | 505 |
| AOP 107 Constitutive androstane receptor activation leading to hepatocellular adenomas and carcinomas in the mouse and the rat | 715 | 1214 716 774 | 719 |
| AOP 108 Inhibition of pyruvate dehydrogenase kinase leading to hepatocellular adenomas and carcinomas (in mouse and rat) | 724 | 768 209 726 769 | 719 |
| AOP 117 Androgen receptor activation leading to hepatocellular adenomas and carcinomas (in mouse and rat) | 785 | 716 774 | 719 |
| AOP 118 Chronic cytotoxicity leading to hepatocellular adenomas and carcinomas (in mouse and rat) | 786 | 787 774 | 719 |
| AOP 37 PPARalpha-dependent liver cancer | 227 | 1170 716 1171 | 719 |
| AOP 153 Aromatase inhibition leading to ovulation inhibition and decreased fertility in female rats | 964 | 965 966 967 968 969 970 971 | 972 |
| AOP 345 Androgen receptor (AR) antagonism leading to decreased fertility in females | 26 | 286 971 | 972 |
Fig. 4Presentation of Occupational disease-specific AOPs and their key events relationships, as well as taxonomic classification for AOPs analysis
Several chemical exposure scenarios (ES) in semiconductor manufacturing
Sourced by Kim (2007)
| Chemicals | Exposure scenario (ES) |
|---|---|
| Arsine (CAS No. 7784-42-1) | Exposure scenario (ES): Semiconductor manufacturing (MP process) In the IMP (Ion implantation) process, work is automatically performed in a closed booth, and the operator is performing tasks such as machine setting and equipment inspection. Workers wear dust-proof clothes, masks, and dust-proof shoes, and a sealed local exhaust system is installed in the workplace |
| Phosphorus oxychloride (CAS No. 10025-87-3) | Exposure scenario (ES): semiconductor manufacturing (site inspection) Phosphorous oxychloride is used as a stable phosphorus supply in semiconductor factories. Phosphorus acts as a dopant to create an N-type layer on a silicon wafer. Workers when inspecting semiconductor manufacturing equipment and processes may be exposed to phosphorus oxychloride |
| Dioxane (Diethyl dioxide) (CAS No. 123-91-1) | Exposure scenario (ES): semiconductor manufacturing (site management) During the semiconductor manufacturing process, photoresist (PR) is applied evenly to the wafer surface, which is a light-sensitive material. The photosensitive agent used in this step is made through the PAC process using dioxane, and is used in the process of applying a photoresist, and exposure may occur. Workers may be exposed to dioxane due to leakage during site management |
| Chlorine (CAS No. 7782-50-5) | Exposure scenario (ES): semiconductor manufacturing (etching work) In semiconductor manufacturing, a crystal product is made using silicon or germanium, cut to the required size, and a wafer is manufactured, and the wafer is made through a semiconductor processing process that undergoes oxidation, etching, diffusion, ion implantation, metallization, etc. Among them, the process that can be exposed to chlorine is an etching process. However, since the process is a closed process, the possibility of respiratory and skin exposure is low. Chlorine is easily vaporized even if it exists in the gaseous or liquid state, so it is unlikely that it will remain in the skin |
| 1,1,2-Trichloroethane (CAS No. 79-00-5) | Exposure scenario (ES): Used as a washing agent in the semiconductor manufacturing process Trichloroethylene, 1,1,2-trichloroethane, tetrachloroethylene, etc. are used as washing agents in the semiconductor manufacturing process. Immerse the product in the washing liquid to remove impurities. When washing a semiconductor using 1,1,2-trichloroethane, it may be exposed to workers |
| Boron trifluoride (CAS No. 7637-07-2) | Exposure scenario (ES): For semiconductor manufacturing (doping) Boron trifluoride, which is a dopant gas, is applied to the gate stack and the A surface layer having the source-drain regions, and the source-drain regions are simultaneously diffusion-doped. In this doping process, workers may be exposed |
Recommendations to minimize the risk of exposure to gallium arsenide
| Recommendations | Contents |
|---|---|
| Awareness of risk | The development of policies for the proper handling of gallium arsenide should be developed and implemented by health and safety personnel, and workers should be trained to be aware of the risks associated with gallium arsenide, and to make appropriate work practices and available engineering improvements. Workers should regularly collect samples from work areas that are likely to be exposed to gallium arsenide particles, or where surfaces are likely to be contaminated, which include crystal growth, crystal puller cleaning, crystal sawing, wafer grinding, and dicing. The sample should be analyzed for inorganic arsenic, and the analysis method described in NIOSH Analysis Method Manual, Method No. 7900 (NIOSH |
| Engineering control and improvement of work practices | Recommendations for engineering controls and work practices are aimed at reducing gallium arsenic and arsenic exposure in the production area of gallium arsenide semiconductor manufacturing |
| PPE | Workers must provide and use disposable protective clothing, gloves, foot covers, and other suitable protective equipment necessary to prevent skin contact with gallium arsenide particulates. This protective device should be worn in the case of exposure to the crystal puller, crystal growth ampoule failure, and other gallium arsenide particles, and engineering controls are the preferred method to protect workers from exposure to gallium arsenide and arsenic, but NIOSH Respirators are also needed to protect workers in certain situations, such as emergencies involving the implementation, maintenance, and repair of engineering controls. Where engineering controls cannot adequately reduce exposures below REL to arsenic, workers should be provided with adequate respirators. If respiratory protection is required, employers must initiate a respiratory protection program that meets the OSHA requirements specified in 29 CFR 1910.134 (OSHA |
| Decontamination and waste disposal | If gallium arsenic or arsenic can be removed from contaminated equipment, decontamination procedures should be established and performed. Where decontamination is not possible, the removal, transportation, and disposal of substances contaminated with gallium arsenide or arsenic must be in accordance with the regulations of the U.S. EPA, U.S. Department of Transportation, and/or state and local authorities. According to Negrei and Galateanu ( |
| Molecular diagnosis in everyday life test: Use of liquid biopsy | Strict medical surveillance of and various precautions against mutants susceptible to cancer must be taken, and cancers resulting from gonadal mutations often require significant modification of treatment strategies. The selection of customized anticancer drugs based on the potential for mutations has become an essential factor in cancer treatment, and molecular analysis is based on the administration of EGFR, BRAF, ALK, ROS1, and PARP inhibitors, as well as the use of other cytotoxic and target drugs. Liquid biopsies, i.e., analysis of circulating DNA or other tumor-derived molecules, offer great potential for the non-invasive monitoring of cancer diseases, drug-sensitive mutation analysis, and early cancer detection, while some tumor or tissue-specific mutant biomarkers that are used to diagnose primary cancer can be effectively utilized. The systematic classification of tumor molecular biomarkers increases the likelihood of discovering numerous new DNA and RNA-based markers of medical relevance |