| Literature DB >> 33937863 |
Xiaowen Li1, Xiaobin Qiang1, Zhenhao Gong1, Yubo Zhang1, Penglai Gong1, Lang Chen1.
Abstract
Negative Poisson's ratio (Entities:
Year: 2021 PMID: 33937863 PMCID: PMC8054987 DOI: 10.34133/2021/1904839
Source DB: PubMed Journal: Research (Wash D C) ISSN: 2639-5274
Poisson's ratio, Young's, and shear modulus of graphene, h-BN and G/h-BN.
| Method | In-plane | Out-of-plane | |||||||
|---|---|---|---|---|---|---|---|---|---|
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| G/ | Stacking mode A | DFT | 0.199 | 886.8 | 369.7 | -0.109 | -0.005 | 44.9 | -1.3 |
| Stacking mode B | DFT | 0.198 | 896.4 | 374.2 | -0.111 | -0.006 | 45.6 | -2.8 | |
| Stacking mode C | DFT | 0.199 | 932.8 | 389.1 | -0.023 | -0.001 | 49.0 | 8.7 | |
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| Monolayer | Graphene | Expt. [ | 0.165 | 340 ± 50 | 145.9 ± 30 | ||||
| DFT | 0.159 | 340 | 146.7 | ||||||
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| Expt. [ | 0.19 | 273 | 114.7 | |||||
| DFT | 0.199 | 238 | 99.3 | ||||||
For monolayer materials, the unit of Young's and shear modulus is Nm−1. For G/h-BN superlattices, the unit of Young's and shear modulus is GPa.
Figure 1Top and side views of G/h-BN superlattices in different stacking modes under in-plane strain (a, d, g) ε = −0.08, (b, e, h) ε = 0, and (c, f, i) ε = 0.08. Here, d represents interfacial layer equilibrium distance.
Figure 2Poisson's ratio v(θ) (v13) as a function of G/h-BN superlattices in (a) stacking mode A, (b) stacking mode B, and (c) stacking mode C for i fixed in the x direction and j varying in the y-z plane. Interlayer binding energy (Ebind) of G/h-BN superlattices in (d) stacking mode A, (e) stacking mode B, and (f) stacking mode C with d. The fitting energy curves below the horizontal coordinate axis represent vdW attraction, and the fitting energy curves above the horizontal coordinate axis represent Pauli repulsion. These dashed lines represent the fitting energy curves for ε = 0.08, and the solid lines represent the fitting energy curves at the equilibrium position. The insets show enlarged energy curves.
Figure 3Unit cell of (a) graphene and (b) h-BN. (c) Wave function superposition of A and B atoms. (d) The length of p orbital in each layer of G/h-BN superlattice under different strains. Here, a represents the distance between A and B atoms. Under the in-plane strain ε = δ/a, the length of p orbital is L + δL.
Figure 4The charge density with the isosurface of 0.103 Å−3 and the electron localization function (ELF) with the Miller indices of (1 1 0) of h-BN superlattices in (a) stacking mode A, (b) stacking mode B, and (c) stacking mode C. The red dotted arrows and circles indicate the overlap of the p orbits, while the black dotted arrows and circles show that the overlap of the p orbitals does not actually exist.
Figure 5Electronic band structures of G/h-BN superlattices in different stacking modes from DFT (gray) and TB (black) calculations. Red, green, and blue denote the contributions of the p orbitals of C1, C2, and N atoms, respectively.
The values of d0, f, and Poisson's ratio of G/h-BN superlattices in different stacking modes.
| Stacking mode |
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| Poisson's ratio |
|---|---|---|---|
| A | 3.448 | -0.31 | -0.109 |
| B | 3.416 | -0.31 | -0.111 |
| C | 3.274 | -0.22 | -0.023 |
Poisson's ratios of vdW materials with NPR.
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|---|---|
| Bilayer graphene [ | -0.09 |
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| -0.12 |
| G/MoS2 heterostructure [ | -0.09 |
| G/ | |
| Stacking mode A | -0.109 |
| Stacking mode B | -0.111 |