Xuewei Zhao1,2,3, Guilei Wang2,3,4, Hongxiao Lin2,3,4, Yong Du2,3, Xue Luo4, Zhenzhen Kong2,3, Jiale Su2, Junjie Li2,3, Wenjuan Xiong2,3, Yuanhao Miao2,4, Haiou Li1, Guoping Guo1, Henry H Radamson2,3,4,5. 1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China. 2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. 3. Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China. 4. Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China. 5. Department of Electronics Design, Mid Sweden University, Holmgatan 10, 85170 Sundsvall, Sweden.
Abstract
In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at -1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at -1 V are as low as 1.79 mA/cm2 and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.
In this article, we demonstrated novel methods to improve the performance of n class="Chemical">p-i-n photodetectors (n class="Chemical">PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at -1 V is 2.5 nA, which is 2.6-fold lower than that of the GePD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at -1 V are as low as 1.79 mA/cm2 and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxideside due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.
Entities:
Keywords:
GOI; dark current; photodetectors; responsivity
Authors: Jose R Sánchez-Pérez; Cicek Boztug; Feng Chen; Faisal F Sudradjat; Deborah M Paskiewicz; R B Jacobson; Max G Lagally; Roberto Paiella Journal: Proc Natl Acad Sci U S A Date: 2011-11-14 Impact factor: 11.205
Authors: H Chen; P Verheyen; P De Heyn; G Lepage; J De Coster; S Balakrishnan; P Absil; W Yao; L Shen; G Roelkens; J Van Campenhout Journal: Opt Express Date: 2016-03-07 Impact factor: 3.894
Authors: Ali K Okyay; Ammar M Nayfeh; Krishna C Saraswat; Takao Yonehara; Ann Marshall; Paul C McIntyre Journal: Opt Lett Date: 2006-09-01 Impact factor: 3.776