Highly sensitive FET sensors for cadmium detection in one drop of human serum with a hand-held device and investigation of the sensing mechanism.

As the heavy metal contamination is becoming worse, monitoring the heavy metal content in water or human body gets more and more important. In this research, a cadmium ion-selective field effect transistor (Cd-ISFET) for rapidly detecting cadmium ions has been developed and the mechanism of the sensor is also investigated in depth. Our Cd-ISFET sensor exhibits high sensitivity beyond the ideal Nernst sensitivity, wide dynamic range, low detection limit (∼10-11M), which is comparable with inductively coupled plasma mass spectrometry, and easy operation enabling people to detect cadmium ion by themselves. From the analysis of electrical measurement results, this Cd-ISFET is preferred to operate at the bias with the maximum transconductance of the FET to enhance the sensor signal. The AC impedance measurement is carried out to directly investigate the mechanism of an ion-selective membrane (ISM). From impedance results, the real part of the total impedance, which is the resistance, was shown to dominate the sensor signal. The potential drop across the ISM is caused by the heavy metal ion in the membrane, which is employed to the gate of the FET via an extended gate electrode. Cadmium ion detection in one drop of human serum with this sensor was demonstrated. This cost-effective and highly sensitive sensor is promising and can be used by anyone and anywhere to prevent people from cadmium poisoning.