Literature DB >> 33811078

Room temperature coherent control of spin defects in hexagonal boron nitride.

Andreas Gottscholl1, Matthias Diez1, Victor Soltamov1, Christian Kasper1, Andreas Sperlich1, Mehran Kianinia2, Carlo Bradac3, Igor Aharonovich2,4, Vladimir Dyakonov5.   

Abstract

Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure a spin-lattice relaxation time of 18 microseconds and a spin coherence time of 2 microseconds at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. By applying a method to decouple the spin state from its inhomogeneous nuclear environment the optically detected magnetic resonance linewidth is substantially reduced to several tens of kilohertz. Our results are important for the employment of van der Waals materials for quantum technologies, specifically in the context of high resolution quantum sensing of two-dimensional heterostructures, nanoscale devices, and emerging atomically thin magnets.
Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Entities:  

Year:  2021        PMID: 33811078     DOI: 10.1126/sciadv.abf3630

Source DB:  PubMed          Journal:  Sci Adv        ISSN: 2375-2548            Impact factor:   14.136


  13 in total

1.  Chemical control of spin-lattice relaxation to discover a room temperature molecular qubit.

Authors:  M Jeremy Amdur; Kathleen R Mullin; Michael J Waters; Danilo Puggioni; Michael K Wojnar; Mingqiang Gu; Lei Sun; Paul H Oyala; James M Rondinelli; Danna E Freedman
Journal:  Chem Sci       Date:  2022-05-17       Impact factor: 9.969

2.  Excited-state spin-resonance spectroscopy of V[Formula: see text] defect centers in hexagonal boron nitride.

Authors:  Nikhil Mathur; Arunabh Mukherjee; Xingyu Gao; Jialun Luo; Brendan A McCullian; Tongcang Li; A Nick Vamivakas; Gregory D Fuchs
Journal:  Nat Commun       Date:  2022-06-09       Impact factor: 17.694

3.  Long-lived spin-polarized intermolecular exciplex states in thermally activated delayed fluorescence-based organic light-emitting diodes.

Authors:  Sebastian Weissenseel; Andreas Gottscholl; Rebecca Bönnighausen; Vladimir Dyakonov; Andreas Sperlich
Journal:  Sci Adv       Date:  2021-11-17       Impact factor: 14.136

4.  Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water.

Authors:  Evgenii Glushkov; Michal Macha; Esther Räth; Vytautas Navikas; Nathan Ronceray; Cheol Yeon Cheon; Aqeel Ahmed; Ahmet Avsar; Kenji Watanabe; Takashi Taniguchi; Ivan Shorubalko; Andras Kis; Georg Fantner; Aleksandra Radenovic
Journal:  ACS Nano       Date:  2022-03-07       Impact factor: 15.881

5.  Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride.

Authors:  Nai-Jie Guo; Wei Liu; Zhi-Peng Li; Yuan-Ze Yang; Shang Yu; Yu Meng; Zhao-An Wang; Xiao-Dong Zeng; Fei-Fei Yan; Qiang Li; Jun-Feng Wang; Jin-Shi Xu; Yi-Tao Wang; Jian-Shun Tang; Chuan-Feng Li; Guang-Can Guo
Journal:  ACS Omega       Date:  2022-01-04

6.  Carbon defect qubit in two-dimensional WS2.

Authors:  Song Li; Gergő Thiering; Péter Udvarhelyi; Viktor Ivády; Adam Gali
Journal:  Nat Commun       Date:  2022-03-08       Impact factor: 14.919

7.  Ultraviolet Quantum Emitters in Hexagonal Boron Nitride from Carbon Clusters.

Authors:  Song Li; Anton Pershin; Gergő Thiering; Péter Udvarhelyi; Adam Gali
Journal:  J Phys Chem Lett       Date:  2022-04-01       Impact factor: 6.888

8.  Decoherence of V[Formula: see text] spin defects in monoisotopic hexagonal boron nitride.

Authors:  A Haykal; R Tanos; N Minotto; A Durand; F Fabre; J Li; J H Edgar; V Ivády; A Gali; T Michel; A Dréau; B Gil; G Cassabois; V Jacques
Journal:  Nat Commun       Date:  2022-07-27       Impact factor: 17.694

9.  Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines.

Authors:  Fadis F Murzakhanov; Boris V Yavkin; Georgiy V Mamin; Sergei B Orlinskii; Ivan E Mumdzhi; Irina N Gracheva; Bulat F Gabbasov; Alexander N Smirnov; Valery Yu Davydov; Victor A Soltamov
Journal:  Nanomaterials (Basel)       Date:  2021-05-22       Impact factor: 5.076

10.  Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors.

Authors:  Andreas Gottscholl; Matthias Diez; Victor Soltamov; Christian Kasper; Dominik Krauße; Andreas Sperlich; Mehran Kianinia; Carlo Bradac; Igor Aharonovich; Vladimir Dyakonov
Journal:  Nat Commun       Date:  2021-07-22       Impact factor: 14.919

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