Literature DB >> 33799859

Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept.

Lorenzo De Cilladi1,2, Thomas Corradino3,4, Gian-Franco Dalla Betta3,4, Coralie Neubüser4, Lucio Pancheri3,4.   

Abstract

The paper presents the simulation studies of 10 μμm pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A set of Technology Computer-Aided Design (TCAD) parametric simulations was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics, and optimizing the sensor layout for enhanced performance in terms of low capacitance, fast charge collection, and low-power operation. A fine pitch of 10 μμm was chosen to provide high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionizing doses of the order of 10 to 105 krad were also modeled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available from mid-2021.

Entities:  

Keywords:  CMOS; TCAD simulations; fast timing; microstrip sensors; monolithic sensors; particle detectors; silicon detectors

Year:  2021        PMID: 33799859      PMCID: PMC7998939          DOI: 10.3390/s21061990

Source DB:  PubMed          Journal:  Sensors (Basel)        ISSN: 1424-8220            Impact factor:   3.576


  2 in total

1.  A review of advances in pixel detectors for experiments with high rate and radiation.

Authors:  Maurice Garcia-Sciveres; Norbert Wermes
Journal:  Rep Prog Phys       Date:  2018-02-19

2.  The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors.

Authors:  Gerhard Lutz; Matteo Porro; Stefan Aschauer; Stefan Wölfel; Lothar Strüder
Journal:  Sensors (Basel)       Date:  2016-04-28       Impact factor: 3.576

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.