Literature DB >> 33758200

Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures.

Quanyang Tao1, Ruixia Wu2, Qianyuan Li1, Lingan Kong1, Yang Chen1, Jiayang Jiang1, Zheyi Lu1, Bailing Li2, Wanying Li1, Zhiwei Li1, Liting Liu1, Xidong Duan2, Lei Liao1, Yuan Liu3.   

Abstract

Van der Waals heterostructures (vdWHs) have attracted tremendous interest owing to the ability to assemble diverse building blocks without the constraints of lattice matching and processing compatibility. However, once assembled, the fabricated vdWHs can hardly be separated into individual building blocks for further manipulation, mainly due to technical difficulties in the disassembling process. Here, we show a method to disassemble the as-fabricated vdWHs into individual building blocks, which can be further reassembled into new vdWHs with different device functionalities. With this technique, we demonstrate reconfigurable transistors from n-type to p-type and back-gate to dual-gate structures through re-stacking. Furthermore, reconfigurable device behaviors from floating gate memory to Schottky diode and reconfigurable anisotropic Raman behaviors have been obtained through layer re-sequencing and re-twisting, respectively. Our results could lead to a reverse engineering concept of disassembled vdWHs electronics in parallel with state-of-the-art vdWHs electronics, offering a general method for multi-functional pluggable electronics and optoelectronics with limited material building blocks.

Entities:  

Year:  2021        PMID: 33758200      PMCID: PMC7988143          DOI: 10.1038/s41467-021-22118-y

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  41 in total

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Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

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3.  Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts.

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Journal:  ACS Appl Mater Interfaces       Date:  2015-01-06       Impact factor: 9.229

4.  Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices.

Authors:  S J Haigh; A Gholinia; R Jalil; S Romani; L Britnell; D C Elias; K S Novoselov; L A Ponomarenko; A K Geim; R Gorbachev
Journal:  Nat Mater       Date:  2012-07-29       Impact factor: 43.841

Review 5.  2D materials and van der Waals heterostructures.

Authors:  K S Novoselov; A Mishchenko; A Carvalho; A H Castro Neto
Journal:  Science       Date:  2016-07-29       Impact factor: 47.728

6.  Probing van der Waals interactions at two-dimensional heterointerfaces.

Authors:  Baowen Li; Jun Yin; Xiaofei Liu; Hongrong Wu; Jidong Li; Xuemei Li; Wanlin Guo
Journal:  Nat Nanotechnol       Date:  2019-03-25       Impact factor: 39.213

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Authors:  Kyle L Seyler; Ding Zhong; Bevin Huang; Xiayu Linpeng; Nathan P Wilson; Takashi Taniguchi; Kenji Watanabe; Wang Yao; Di Xiao; Michael A McGuire; Kai-Mei C Fu; Xiaodong Xu
Journal:  Nano Lett       Date:  2018-05-21       Impact factor: 11.189

8.  Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices.

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Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

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Authors:  Chenhao Jin; Emma C Regan; Aiming Yan; M Iqbal Bakti Utama; Danqing Wang; Sihan Zhao; Ying Qin; Sijie Yang; Zhiren Zheng; Shenyang Shi; Kenji Watanabe; Takashi Taniguchi; Sefaattin Tongay; Alex Zettl; Feng Wang
Journal:  Nature       Date:  2019-02-25       Impact factor: 49.962

10.  Efficient strain modulation of 2D materials via polymer encapsulation.

Authors:  Zhiwei Li; Yawei Lv; Liwang Ren; Jia Li; Lingan Kong; Yujia Zeng; Quanyang Tao; Ruixia Wu; Huifang Ma; Bei Zhao; Di Wang; Weiqi Dang; Keqiu Chen; Lei Liao; Xidong Duan; Xiangfeng Duan; Yuan Liu
Journal:  Nat Commun       Date:  2020-03-02       Impact factor: 14.919

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  1 in total

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Journal:  Adv Sci (Weinh)       Date:  2021-11-05       Impact factor: 16.806

  1 in total

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