| Literature DB >> 33721498 |
Jin Xiang1, Mincheng Panmai1, Shuwen Bai1, Yuhao Ren2, Guang-Can Li1, Shulei Li1, Jin Liu2, Juntao Li2, Miaoxuan Zeng3, Juncong She3, Yi Xu4, Sheng Lan1.
Abstract
Silicon (Si) is generally considered as a poor photon emitter, and various scenarios have been proposed to improve the photon emission efficiency of Si. Here, we report the observation of a burst of the hot electron luminescence from Si nanoparticles with diameters of 150-250 nm, which is triggered by the exponential increase of the carrier density at high temperatures. We show that the stable white light emission above the threshold can be realized by resonantly exciting either the mirror-image-induced magnetic dipole resonance of a Si nanoparticle placed on a thin silver film or the surface lattice resonance of a regular array of Si nanopillars with femtosecond laser pulses of only a few picojoules, where significant enhancements in two- and three-photon-induced absorption can be achieved. Our findings indicate the possibility of realizing all-Si-based nanolasers with manipulated emission wavelength, which can be easily incorporated into future integrated optical circuits.Entities:
Keywords: Mie resonance; Si nanoparticle; femtosecond laser pulse; hot electron luminescence; surface lattice resonance; thin metal film
Year: 2021 PMID: 33721498 DOI: 10.1021/acs.nanolett.0c04314
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189