| Literature DB >> 33717841 |
Chi-Yuan Chang1,2, Hsin-Hsiang Huang1,3,4, Hsinhan Tsai5, Shu-Ling Lin1, Pang-Hsiao Liu1,4, Wei Chen3,6, Fang-Chi Hsu7, Wanyi Nie5, Yang-Fang Chen1,2, Leeyih Wang1,8.
Abstract
Crystallinity and crystal orientation have a predominant impact on a materials' semiconducting properties, thus it is essential to manipulate the microstructure arrangements for desired semiconducting device performance. Here, ultra-uniform hole-transporting material (HTM) by self-assembling COOH-functionalized P3HT (P3HT-COOH) is fabricated, on which near single crystal quality perovskite thin film can be grown. In particular, the self-assembly approach facilitates the P3HT-COOH molecules to form an ordered and homogeneous monolayer on top of the indium tin oxide (ITO) electrode facilitate the perovskite crystalline film growth with high quality and preferred orientations. After detailed spectroscopy and device characterizations, it is found that the carboxylic acid anchoring groups can down-shift the work function and passivate the ITO surface, retarding the interface carrier recombination. As a result, the device made with the self-assembled HTM show high open-circuit voltage over 1.10 V and extend the lifetime over 4,300 h when storing at 30% relative humidity. Moreover, the cell works efficiently under much reduced light power, making it useful as power source under dim-light conditions. The demonstration suggests a new facile way of fabricating monolayer HTM for high efficiency perovskite devices, as well as the interconnecting layer needed for tandem cell.Entities:
Keywords: hole extraction layer; out‐of‐plane orientation; self‐assembled
Year: 2021 PMID: 33717841 PMCID: PMC7927620 DOI: 10.1002/advs.202002718
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 16.806