| Literature DB >> 33712582 |
Hariom Jani1,2,3, Jiajun Linghu4,5, Sonu Hooda6, Rajesh V Chopdekar7, Changjian Li6,8, Ganesh Ji Omar6,4, Saurav Prakash6,9, Yonghua Du10,11, Ping Yang12, Agnieszka Banas12, Krzysztof Banas12, Siddhartha Ghosh6,13, Sunil Ojha14, G R Umapathy14, Dinakar Kanjilal14, A Ariando6,9,4, Stephen J Pennycook6,9,8, Elke Arenholz7,15, Paolo G Radaelli16, J M D Coey17,18, Yuan Ping Feng9,4, T Venkatesan19,20,21,22,23.
Abstract
Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe2O3 (haematite) - now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe2O3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe2O3.Entities:
Year: 2021 PMID: 33712582 DOI: 10.1038/s41467-021-21807-y
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919