| Literature DB >> 33707448 |
Libo Zhang1,2, Zhiqingzi Chen1, Kaixuan Zhang1,2, Lin Wang3, Huang Xu1, Li Han1,2, Wanlong Guo1,4, Yao Yang1,4, Chia-Nung Kuo5, Chin Shan Lue5, Debashis Mondal6,7, Jun Fuji6, Ivana Vobornik6, Barun Ghosh8, Amit Agarwal8, Huaizhong Xing9,10, Xiaoshuang Chen11,12, Antonio Politano13,14, Wei Lu1,4.
Abstract
The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W-1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging.Entities:
Year: 2021 PMID: 33707448 DOI: 10.1038/s41467-021-21906-w
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919