Literature DB >> 33686139

Electrical transport properties and Kondo effect in La1-xPrxNiO3-δ thin films.

Van Hien-Hoang1, Nak-Kwan Chung2, Heon-Jung Kim3,4.   

Abstract

The Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1-xPrxNiO3-δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

Entities:  

Year:  2021        PMID: 33686139     DOI: 10.1038/s41598-021-84736-2

Source DB:  PubMed          Journal:  Sci Rep        ISSN: 2045-2322            Impact factor:   4.379


  9 in total

1.  Electronic properties of the metallic perovskite LaNiO3: Correlated behavior of 3d electrons.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1992-09-01

2.  Electrolyte gate-controlled Kondo effect in SrTiO3.

Authors:  Menyoung Lee; J R Williams; Sipei Zhang; C Daniel Frisbie; D Goldhaber-Gordon
Journal:  Phys Rev Lett       Date:  2011-12-12       Impact factor: 9.161

3.  Carrier localization in perovskite nickelates from oxygen vacancies.

Authors:  Michele Kotiuga; Zhen Zhang; Jiarui Li; Fanny Rodolakis; Hua Zhou; Ronny Sutarto; Feizhou He; Qi Wang; Yifei Sun; Ying Wang; Neda Alsadat Aghamiri; Steven Bennett Hancock; Leonid P Rokhinson; David P Landau; Yohannes Abate; John W Freeland; Riccardo Comin; Shriram Ramanathan; Karin M Rabe
Journal:  Proc Natl Acad Sci U S A       Date:  2019-10-14       Impact factor: 11.205

4.  Metal-insulator transition in ultrathin LaNiO3 films.

Authors:  R Scherwitzl; S Gariglio; M Gabay; P Zubko; M Gibert; J-M Triscone
Journal:  Phys Rev Lett       Date:  2011-06-14       Impact factor: 9.161

5.  Experimental Observation of Monoclinic Distortion in the Insulating Regime of SmNiO3 by Synchrotron X-ray Diffraction.

Authors:  Federico Serrano-Sánchez; François Fauth; José Luis Martínez; José Antonio Alonso
Journal:  Inorg Chem       Date:  2019-08-21       Impact factor: 5.165

6.  Latent instabilities in metallic LaNiO3 films by strain control of Fermi-surface topology.

Authors:  Hyang Keun Yoo; Seung Ill Hyun; Luca Moreschini; Hyeong-Do Kim; Young Jun Chang; Chang Hee Sohn; Da Woon Jeong; Soobin Sinn; Yong Su Kim; Aaron Bostwick; Eli Rotenberg; Ji Hoon Shim; Tae Won Noh
Journal:  Sci Rep       Date:  2015-03-04       Impact factor: 4.379

7.  Evidence of weak localization in quantum interference effects observed in epitaxial La0.7Sr0.3MnO3 ultrathin films.

Authors:  Wei Niu; Ming Gao; Xuefeng Wang; Fengqi Song; Jun Du; Xinran Wang; Yongbing Xu; Rong Zhang
Journal:  Sci Rep       Date:  2016-05-16       Impact factor: 4.379

8.  Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films.

Authors:  Evgeny Mikheev; Adam J Hauser; Burak Himmetoglu; Nelson E Moreno; Anderson Janotti; Chris G Van de Walle; Susanne Stemmer
Journal:  Sci Adv       Date:  2015-11-06       Impact factor: 14.136

9.  Modulation of metal-insulator transitions of NdNiO3/LaNiO3/NdNiO3 trilayers via thickness control of the LaNiO3 layer.

Authors:  Tai Nguyen; Van Hien Hoang; Tae-Yeong Koo; Nam-Suk Lee; Heon-Jung Kim
Journal:  Sci Rep       Date:  2019-12-27       Impact factor: 4.379

  9 in total

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