| Literature DB >> 33673544 |
Krzysztof Ryczko1, Agata Zielińska1, Grzegorz Sęk1.
Abstract
The optical gain spectrum has been investigated theoretically for various designs of active region based on InAs/GaInSb quantum wells-i.e., a type II material system employable in interband cascade lasers (ICLs) or optical amplifiers operating in the mid-infrared spectral range. The electronic properties and optical responses have been calculated using the eight-band k·p theory, including strain and external electric fields, to simulate the realistic conditions occurring in operational devices. The results show that intentionally introducing a slight nonuniformity between two subsequent stages of a cascaded device via the properly engineered modification of the type II quantum wells of the active area offers the possibility to significantly broaden the gain function. A-3 dB gain width of 1 µm can be reached in the 3-5 µm range, which is almost an order of magnitude larger than that of any previously reported ICLs. This is a property strongly demanded in many gas-sensing or free-space communication applications, and it opens a way for a new generation of devices in the mid-infrared range, such as broadly tunable single-mode lasers, mode-locked lasers for laser-based spectrometers, and optical amplifiers or superluminescent diodes which do not exist beyond 3 µm yet.Entities:
Keywords: interband cascade laser; mid-infrared range; optical gain; quantum well
Year: 2021 PMID: 33673544 DOI: 10.3390/ma14051112
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623