Literature DB >> 33658496

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator.

Masataka Mogi1,2,3, Kenji Yasuda4,5, Reika Fujimura4, Ryutaro Yoshimi6, Naoki Ogawa4,6, Atsushi Tsukazaki7, Minoru Kawamura6, Kei S Takahashi6, Masashi Kawasaki4,6, Yoshinori Tokura8,9,10.   

Abstract

Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum anomalous Hall state but also enables the electrical control of its magnetic state at the surface. Here, we demonstrate efficient current-induced switching of the surface ferromagnetism in hetero-bilayers consisting of the topological insulator (Bi1-xSbx)2Te3 and the ferromagnetic insulator Cr2Ge2Te6, where the proximity-induced ferromagnetic surface states play two roles: efficient charge-to-spin current conversion and emergence of large anomalous Hall effect. The sign reversal of the surface ferromagnetic states with current injection is clearly observed, accompanying the nearly full magnetization reversal in the adjacent insulating Cr2Ge2Te6 layer of an optimal thickness range. The present results may facilitate an electrical control of dissipationless topological-current circuits.

Entities:  

Year:  2021        PMID: 33658496     DOI: 10.1038/s41467-021-21672-9

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  1 in total

1.  Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates.

Authors:  L Locatelli; A Kumar; P Tsipas; A Dimoulas; E Longo; R Mantovan
Journal:  Sci Rep       Date:  2022-03-10       Impact factor: 4.379

  1 in total

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