| Literature DB >> 33633539 |
Shiqing Zhang1, Hui Xu1, Zhiwei Li1, Sen Liu1, Bing Song1, Qingjiang Li1.
Abstract
Ovonic threshold switch (OTS) has received great attention in neuromorphic computing due to its support for high-density synapse array as a selector and leaky-integration-firing functions Hodgkin-Huxley neurons. However, there is no simple and complete model for device simulation and integrated circuit design, which hindered application until now. In this work, we developed a compact physical model of OTS based on the Poole-Frenkel effect accompanied by the thermal dissipation effect for the first time. The thermal dissipation effect describes the energy flow between the device and the environment so that the model is more practical. Compared with previous experiments, the numerical results fairly fitted the electrical characteristics, demonstrating the model validity. In addition, the relation of the device performance with material and structure was deduced, which can facilitate optimizing the OTS device. The model will be useful for device design and implemented with high speed for simplicity.Entities:
Keywords: chalcogenides; ovonic threshold switch; physical model; thermal conductivity; thermal dissipation effect
Year: 2021 PMID: 33633539 PMCID: PMC7901986 DOI: 10.3389/fnins.2021.635264
Source DB: PubMed Journal: Front Neurosci ISSN: 1662-453X Impact factor: 4.677