Literature DB >> 33578657

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy.

Marco Abbarchi1, Takaaki Mano2, Takashi Kuroda2, Akihiro Ohtake2, Kazuaki Sakoda2.   

Abstract

We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces. Despite a similar s-shell exciton structure common to the three cases, the absence of a wetting layer for (311)A and (111)A samples leads to a larger carrier confinement compared to (001), where a wetting layer is present. This leads to a more pronounced dependence of the binding energies of s-shell excitons on the quantum dot size and to the strong anti-binding character of the positive-charged exciton for smaller quantum dots. In-plane geometrical anisotropies of (311)A and (001) quantum dots lead to a large electron-hole fine interaction (fine structure splitting (FSS) ∼100 μeV), whereas for the three-fold symmetric (111)A counterpart, this figure of merit is reduced by about one order of magnitude. In all these cases, we do not observe any size dependence of the fine structure splitting. Heavy-hole/light-hole mixing is present in all the studied cases, leading to a broad spread of linear polarization anisotropy (from 0 up to about 50%) irrespective of surface orientation (symmetry of the confinement), fine structure splitting, and nanostructure size. These results are important for the further development of ideal single and entangled photon sources based on semiconductor quantum dots.

Entities:  

Keywords:  III–V quantum dots; droplet epitaxy; exciton dynamics

Year:  2021        PMID: 33578657      PMCID: PMC7916409          DOI: 10.3390/nano11020443

Source DB:  PubMed          Journal:  Nanomaterials (Basel)        ISSN: 2079-4991            Impact factor:   5.076


  26 in total

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3.  GaAs(111)A-(2 x 2) reconstruction studied by scanning tunneling microscopy.

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7.  Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature.

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8.  Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots.

Authors:  Daniel Huber; Marcus Reindl; Yongheng Huo; Huiying Huang; Johannes S Wildmann; Oliver G Schmidt; Armando Rastelli; Rinaldo Trotta
Journal:  Nat Commun       Date:  2017-05-26       Impact factor: 14.919

9.  Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001).

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Journal:  Nanoscale Res Lett       Date:  2014-06-18       Impact factor: 4.703

10.  Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics.

Authors:  Xueyong Yuan; Fritz Weyhausen-Brinkmann; Javier Martín-Sánchez; Giovanni Piredda; Vlastimil Křápek; Yongheng Huo; Huiying Huang; Christian Schimpf; Oliver G Schmidt; Johannes Edlinger; Gabriel Bester; Rinaldo Trotta; Armando Rastelli
Journal:  Nat Commun       Date:  2018-08-03       Impact factor: 14.919

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