| Literature DB >> 33565994 |
Jaeyu Lee1, G Jang2, J Kim3, B Oh1, D E Kim1, S Lee1, J H Kim1, J Ko1, C Min1, S Shin1.
Abstract
This paper presents the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.Keywords: EUV; fourth-generation storage ring; free-electron laser
Year: 2020 PMID： 33565994 DOI： 10.1107/S1600577520005676
Source DB: PubMed Journal: J Synchrotron Radiat ISSN： 0909-0495 Impact factor: 2.616