Literature DB >> 33523855

Antimony thin films demonstrate programmable optical nonlinearity.

Zengguang Cheng1,2, Tara Milne2, Patrick Salter3, Judy S Kim2,4,5, Samuel Humphrey2, Martin Booth3, Harish Bhaskaran6.   

Abstract

The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting yet not highly explored area of research beyond plasmonics. Even more importantly, the concept of an active metal that can undergo an optical nonvolatile transition has not been explored. Here, we demonstrate that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We show that these states, corresponding to the crystalline and amorphous phases of the metal, are stable at room temperature. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities and switching speed using single subpicosecond pulses. The simplicity of depositing a single metal portends its potential for use in any optoelectronic application where metallic conductors with an actively tunable state are important.
Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).

Entities:  

Year:  2021        PMID: 33523855      PMCID: PMC7775754          DOI: 10.1126/sciadv.abd7097

Source DB:  PubMed          Journal:  Sci Adv        ISSN: 2375-2548            Impact factor:   14.136


  5 in total

1.  Extremely Narrow and Actively Tunable Mie Surface Lattice Resonances in GeSbTe Metasurfaces: Study.

Authors:  Lei Xiong; Hongwei Ding; Yuanfu Lu; Guangyuan Li
Journal:  Nanomaterials (Basel)       Date:  2022-02-20       Impact factor: 5.076

2.  Thickness-Dependent Crystallization of Ultrathin Antimony Thin Films for Monatomic Multilevel Reflectance and Phase Change Memory Designs.

Authors:  Daniel T Yimam; Bart J Kooi
Journal:  ACS Appl Mater Interfaces       Date:  2022-03-10       Impact factor: 9.229

3.  Designing Conductive-Bridge Phase-Change Memory to Enable Ultralow Programming Power.

Authors:  Zhe Yang; Bowen Li; Jiang-Jing Wang; Xu-Dong Wang; Meng Xu; Hao Tong; Xiaomin Cheng; Lu Lu; Chunlin Jia; Ming Xu; Xiangshui Miao; Wei Zhang; En Ma
Journal:  Adv Sci (Weinh)       Date:  2022-01-14       Impact factor: 16.806

4.  Antimony as a Programmable Element in Integrated Nanophotonics.

Authors:  Samarth Aggarwal; Tara Milne; Nikolaos Farmakidis; Johannes Feldmann; Xuan Li; Yu Shu; Zengguang Cheng; Martin Salinga; Wolfram Hp Pernice; Harish Bhaskaran
Journal:  Nano Lett       Date:  2022-04-22       Impact factor: 12.262

5.  Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.

Authors:  Xue-Peng Wang; Xian-Bin Li; Nian-Ke Chen; Bin Chen; Feng Rao; Shengbai Zhang
Journal:  Adv Sci (Weinh)       Date:  2021-05-14       Impact factor: 16.806

  5 in total

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