| Literature DB >> 33514259 |
Jongyoon Kim1, Kang-Il Lee2, Hyun-Young Jeong3, Ji-Hoon Lee1, Yong Sup Choi2.
Abstract
Optical emission spectroscopy is widely used in semiconductor and display manufacturing for plasma process monitoring. However, because of the contamination of the viewport, quantitative analysis is extremely difficult; therefore, qualitative analysis is used to detect species in the process. To extend plasma monitoring in advanced precise processes, the contamination problem of the viewport must be solved. We propose a new spectrum monitoring apparatus with a roll-to-roll transparent film window for optical diagnostics of a plasma system. By moving a transparent film in front of the viewport, contamination in the emission light path becomes negligible. However, the speed of the film should be optimized to reduce the maintenance period and to minimize measurement errors. We calculated the maximum thickness of SiO2, Si3N4, ITO, and the Ar/CHF3 plasma contaminant to suppress the electron temperature error measured by the line-intensity-ratio within 2% at 2 eV. The thickness of the Si3N4, ITO, and Ar/CHF3 plasma contaminant should be thinner than 12.5 nm, 7.5 nm, and 100 nm, respectively.Entities:
Year: 2021 PMID: 33514259 DOI: 10.1063/5.0031869
Source DB: PubMed Journal: Rev Sci Instrum ISSN: 0034-6748 Impact factor: 1.523