| Literature DB >> 33492150 |
Jingying Zheng1, Haotian Du2, Fan Jiang1, Ziming Zhang2,3, Baisheng Sa1, Wenhui He4, Liying Jiao2, Hongbing Zhan1.
Abstract
The efficient nondestructive assessment of quality and homogeneity for two-dimensional (2D) MoS2 is critically important to advance their practical applications. Here, we presented a rapid and large-area assessment method for visually evaluating the quality and uniformity of chemical vapor deposition (CVD)-grown MoS2 monolayers simply with conventional optical microscopes. This was achieved through one-pot adsorbing abundant sulfur particles selectively onto as-grown poorer-quality MoS2 monolayers in a CVD system without any additional treatment. We further revealed that this favorable adsorption of sulfur particles on MoS2 originated from their intrinsic higher-density sulfur vacancies. Based on unadsorbed MoS2 monolayers, superior performance field effect transistors with a mobility of ∼49 cm2 V-1 s-1 were constructed. Importantly, the assessment approach was noninvasive due to the all-vapor-phase and moderate adsorption-desorption process. Our work offers a new route for the performance and yield optimization of devices by quality assessment of 2D semiconductors prior to device fabrication.Entities:
Keywords: field effect transistors; molybdenum disulfide; optical visualization; quality assessment, sulfur particles; two-dimensional materials
Year: 2021 PMID: 33492150 DOI: 10.1021/acs.nanolett.0c03884
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189