Literature DB >> 33466483

Switched-Biasing Techniques for CMOS Voltage-Controlled Oscillator.

Cheol-Woo Kang1, Hyunwon Moon2, Jong-Ryul Yang1.   

Abstract

A voltage-controlled oscillator (VCO) is a key component to generate high-speed clock of mixed-mode circuits and local oscillation signals of the frequency conversion in wired and wireless application systems. In particular, the recent evolution of new high-speed wireless systems in the millimeter-wave frequency band calls for the implementation of the VCO with high oscillation frequency and low close-in phase noise. The effect of the flicker noise on the phase noise of the VCO should be minimized because the flicker noise dramatically increases as the deep-submicron complementary metal-oxide-semiconductor (CMOS) process is scaled down, and the flicker corner frequency also increases, up to several MHz, in the up-to-date CMOS process. The flicker noise induced by the current source is a major factor affecting the phase noise of the VCO. Switched-biasing techniques have been proposed to minimize the effect of the flicker noise at the output of the VCO with biasing AC-coupled signals at the current source of the VCO. Reviewing the advantages and disadvantages reported in the previous studies, it is analyzed which topology to implement the switched-biasing technique is advantageous for improving the performance of the CMOS VCOs.

Entities:  

Keywords:  CMOS; current source; figure-of-merit; flicker noise; phase noise; switched-biasing; voltage-controlled oscillator

Year:  2021        PMID: 33466483      PMCID: PMC7796518          DOI: 10.3390/s21010316

Source DB:  PubMed          Journal:  Sensors (Basel)        ISSN: 1424-8220            Impact factor:   3.576


  2 in total

1.  A VCO-Based CMOS Readout Circuit for Capacitive MEMS Microphones.

Authors:  Andres Quintero; Fernando Cardes; Carlos Perez; Cesare Buffa; Andreas Wiesbauer; Luis Hernandez
Journal:  Sensors (Basel)       Date:  2019-09-24       Impact factor: 3.576

  2 in total
  2 in total

1.  PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments.

Authors:  Andrei Enache; Florin Draghici; Florin Mitu; Razvan Pascu; Gheorghe Pristavu; Mihaela Pantazica; Gheorghe Brezeanu
Journal:  Sensors (Basel)       Date:  2022-02-14       Impact factor: 3.576

2.  A Novel 65 nm Active-Inductor-Based VCO with Improved Q-Factor for 24 GHz Automotive Radar Applications.

Authors:  Prangyadarsini Behera; Abrar Siddique; Tahesin Samira Delwar; Manas Ranjan Biswal; Yeji Choi; Jee-Youl Ryu
Journal:  Sensors (Basel)       Date:  2022-06-22       Impact factor: 3.847

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.