Dario Schiavon1, Elżbieta Litwin-Staszewska2, Rafał Jakieła3, Szymon Grzanka1, Piotr Perlin1. 1. Optoelectronic Devices Laboratory, Institute of High Pressure Physics, Polish Academy of Sciences, al. Sokołowska 29/37, 01-142 Warsaw, Poland. 2. Laboratory of Nitride Semiconductor Physics, Institute of High Pressure Physics, Polish Academy of Sciences, al. Sokołowska 29/37, 01-142 Warsaw, Poland. 3. Laboratory of X-ray and Electron Microscopy Research, Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland.
Abstract
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that n class="Chemical">germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
Authors: Dario Schiavon; Robert Mroczyński; Anna Kafar; Grzegorz Kamler; Iryna Levchenko; Stephen Najda; Piotr Perlin Journal: Materials (Basel) Date: 2021-11-30 Impact factor: 3.623