Lukang Wang1, You Zhao1, Yulong Zhao1, Yu Yang1, Taobo Gong1, Le Hao1, Wei Ren1,2. 1. State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China. 2. Science and Technology on Applied Physical Chemistry Laboratory, Shaanxi Applied Physics and Chemistry Research Institute, Xi'an 710061, China.
Abstract
Silicon carbide (SiC) has promising potential for pressure sensing in a high temperature and harsh environment due to its outstanding material properties. In this work, a 4H-SiC piezoresistive pressure chip fabricated based on femtosecond laser technology was proposed. A 1030 nm, 200 fs Yb: KGW laser with laser average powers of 1.5, 3 and 5 W was used to drill blind micro holes for achieving circular sensor diaphragms. An accurate per lap feed of 16.2 μm was obtained under laser average power of 1.5 W. After serialized laser processing, the machining depth error of no more than 2% and the surface roughness as low as 153 nm of the blind hole were measured. The homoepitaxial piezoresistors with a doping concentration of 1019 cm-3 were connected by a closed-loop Wheatstone bridge after a rapid thermal annealing process, with a specific contact resistivity of 9.7 × 10-5 Ω cm2. Our research paved the way for the integration of femtosecond laser micromachining and SiC pressure sensor chips manufacturing.
n class="Chemical">Silicon carbide (pan> class="Chemical">SiC) has promising potential for pressure sensing in a high temperature and harsh environment due to its outstanding material properties. In this work, a 4H-SiC piezoresistive pressure chip fabricated based on femtosecond laser technology was proposed. A 1030 nm, 200 fs Yb: KGW laser with laser average powers of 1.5, 3 and 5 W was used to drill blind micro holes for achieving circular sensor diaphragms. An accurate per lap feed of 16.2 μm was obtained under laser average power of 1.5 W. After serialized laser processing, the machining depth error of no more than 2% and the surface roughness as low as 153 nm of the blind hole were measured. The homoepitaxial piezoresistors with a doping concentration of 1019 cm-3 were connected by a closed-loop Wheatstone bridge after a rapid thermal annealing process, with a specific contact resistivity of 9.7 × 10-5 Ω cm2. Our research paved the way for the integration of femtosecond laser micromachining and SiC pressure sensor chips manufacturing.