Literature DB >> 33379447

Remote GaN metalens applied to white light-emitting diodes.

Vin-Cent Su, Chia-Chun Gao.   

Abstract

In this work, a gallium nitride (GaN) metalens as a remote device has been applied to a commercially available white light-emitting diode (LED). We show the successful demonstration in fabricating the high-aspect-ratio GaN metalens capable of diffraction-limited focusing with an experimentally focusing efficiency up to 89% at the wavelength of 450 nm. The metalens can also resolve the subwavelength features as imaging. For the proof of concept, the rainbow-like phenomenon can be observed by using the remote GaN metalens to disperse the white light radiated by the white LED. The diode lasers working at various wavelengths have been employed to carefully verify the positions of colors in the rainbow-like profile. The results in this study can inspire the semiconductor manufacturing industry at integrating metalenses of various kinds and functionalities into the package of LED modules in the near future and prospect widespread applications in advanced solid-state lighting.

Entities:  

Year:  2020        PMID: 33379447     DOI: 10.1364/OE.411525

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Directional emission of white light via selective amplification of photon recycling and Bayesian optimization of multi-layer thin films.

Authors:  Heribert Wankerl; Christopher Wiesmann; Laura Kreiner; Rainer Butendeich; Alexander Luce; Sandra Sobczyk; Maike Lorena Stern; Elmar Wolfgang Lang
Journal:  Sci Rep       Date:  2022-03-28       Impact factor: 4.379

2.  Polarization-insensitive GaN metalenses at visible wavelengths.

Authors:  Meng-Hsin Chen; Cheng-Wei Yen; Chia-Chun Guo; Vin-Cent Su; Chieh-Hsiung Kuan; Hoang Yan Lin
Journal:  Sci Rep       Date:  2021-07-15       Impact factor: 4.379

  2 in total

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