Literature DB >> 33353092

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM.

David Quirion1, Maria Manna1, Salvador Hidalgo1, Giulio Pellegrini1.   

Abstract

This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.

Entities:  

Keywords:  3D silicon detectors; high-energy physic experiments; process integration; process-induced stress; radiation-hard detectors; silicon manufacturing; through-silicon vias

Year:  2020        PMID: 33353092      PMCID: PMC7766386          DOI: 10.3390/mi11121126

Source DB:  PubMed          Journal:  Micromachines (Basel)        ISSN: 2072-666X            Impact factor:   2.891


  2 in total

1.  Microdosimetry performance of the first multi-arrays of 3D-cylindrical microdetectors.

Authors:  Diana Bachiller-Perea; Mingming Zhang; Celeste Fleta; David Quirion; Daniela Bassignana; Faustino Gómez; Consuelo Guardiola
Journal:  Sci Rep       Date:  2022-07-18       Impact factor: 4.996

2.  Optimal Design of Multiple Floating Rings for 3D Large-Area Trench Electrode Silicon Detector.

Authors:  Wenzheng Cheng; Manwen Liu; Zheng Li; Zhenyang Zhao; Zhihua Li
Journal:  Sensors (Basel)       Date:  2022-08-24       Impact factor: 3.847

  2 in total

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