| Literature DB >> 33275309 |
Matthias Wurdack1, Tinghe Yun2, Eliezer Estrecho1, Nitu Syed3, Semonti Bhattacharyya4, Maciej Pieczarka1, Ali Zavabeti3,5, Shao-Yu Chen4, Benedikt Haas6, Johannes Müller6, Mark N Lockrey7, Qiaoliang Bao8, Christian Schneider9,10, Yuerui Lu11, Michael S Fuhrer4, Andrew G Truscott12, Torben Daeneke13, Elena A Ostrovskaya1.
Abstract
Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, it is shown that the novel, ultrathin Ga2 O3 glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga2 O3 capping of monolayer WS2 outperforms commercial-grade hBN in both scalability and optical performance at room temperature. These properties make Ga2 O3 highly suitable for large-scale passivation and protection of monolayer TMDCs in functional heterostructures.Entities:
Keywords: 2D materials; atomically thin semiconductors; device integration; exciton enhancement; passivation; transition metal dichalcogenides
Year: 2020 PMID: 33275309 DOI: 10.1002/adma.202005732
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849