| Literature DB >> 33256399 |
Wenhao Xing1,2,3, Chunlan Tang2,4, Naizheng Wang1,3, Chunxiao Li1,3, Zhuang Li1,3, Jieyun Wu4, Zheshuai Lin1, Jiyong Yao1, Wenlong Yin2, Bin Kang2.
Abstract
Metal chalcogenides play a critical role in the infrared (IR) nonlinear optical (NLO) field. However, Eu-based chalcogenide-type IR NLO materials are still scarce up to now. In this paper, two new quaternary Eu-based chalcogenides, EuHgGeSe4 and EuHgSnS4, containing the "NLO active groups" [HgQ4]6- (Q = S, Se) and [GeSe4]4-/[SnS4]4- were synthesized through traditional high-temperature solid-state reactions. They possess noncentrosymmetric structures, crystallizing in the Ama2 space group, and exhibit strong phase-matchable second-harmonic-generation (SHG) responses (3.1× and 1.77× that of AgGaS2 for EuHgGeSe4 and EuHgSnS4, respectively). Meanwhile, the optical band gaps of EuHgGeSe4 (1.97 eV) and EuHgSnS4 (2.14 eV) were determined from UV-vis-NIR diffuse reflectance spectra. Differential scanning calorimetry (DSC) analyses reveal the congruent-melting behavior of EuHgGeSe4. Furthermore, structural analysis and theoretical calculations verify the critical driving effects of [HgQ4]6- tetrahedra on the strong SHG activity. The overall results demonstrate that EuHgGeSe4 and EuHgSnS4 are potential IR NLO materials.Entities:
Year: 2020 PMID: 33256399 DOI: 10.1021/acs.inorgchem.0c03176
Source DB: PubMed Journal: Inorg Chem ISSN: 0020-1669 Impact factor: 5.165