Root silicon deposition and its resultant reduction of sodium bypass flow is modulated by OsLsi1 and OsLsi2 in rice.

Silicon (Si) can alleviate salt stress by decreasing Na+ bypass flow in rice (Oryza sativa L.), however, the mechanisms underpinning remain veiled. In this study, we investigated the roles of OsLsi1 and OsLsi2 in Si-induced reduction of bypass flow and its resultant alleviation of salt stress by using lsi1 and lsi2 mutants (defective in OsLsi1 and OsLsi2, respectively) and their wild types (WTs). Under salt stress, Si promoted plant growth and decreased root-to-shoot Na+ translocation in WTs, but not in mutants. Simultaneously, quantitative estimation and fluorescent visualization of trisodium-8-hydroxy-1,3,6-pyrenetrisulphonic (PTS, an apoplastic tracer) showed Si reduced bypass flow in WTs, but not in mutants. Energy-dispersive X-ray microanalysis (EDX) showed Si was deposited at root endodermis in WTs, but not in mutants. Moreover, results obtained from root split experiment using lsi1 WT showed down-regulated expression of Si transport genes (OsLsi1 and OsLsi2) in root accelerated Si deposition at root endodermis. In summary, our results reveal that Si deposition at root endodermis and its resultant reduction of Na+ bypass flow is modulated by OsLsi1 and OsLsi2 and regulated by the expression of OsLsi1 and OsLsi2, implying that root Si deposition could be an active and physiologically-regulated process in rice.