| Literature DB >> 33192279 |
Domenica Convertino1,2, Neeraj Mishra2, Laura Marchetti2,3, Mariantonietta Calvello4, Alessandro Viegi4, Antonino Cattaneo4, Filippo Fabbri2,5, Camilla Coletti2.
Abstract
In recent years, transition metal dichalcogenides have been attracting an increasing interest in the biomedical field, thus implying the need of a deeper understanding of their impact on cell behavior. In this study we investigate tungsten disulfide (WS2) grown via chemical vapor deposition (CVD) on a transparent substrate (sapphire) as a platform for neural-like cell culture. We culture SH-SY5Y human neuroblastoma cells on WS2, using graphene, sapphire and standard culture well as controls. The quality, thickness and homogeneity of the materials is analyzed using atomic force microscopy and Raman spectroscopy. The cytocompatibility of CVD WS2 is investigated for the first time by cell viability and differentiation assessment on SH-SY5Y cells. We find that cells differentiated on WS2, displaying a viability and neurite length comparable with the controls. These findings shine light on the possibility of using WS2 as a cytocompatible material for interfacing neural cells.Entities:
Keywords: SH-SY5Y cells; WS2; differentiation; graphene; sapphire; transition metal dichalcogenides
Year: 2020 PMID: 33192279 PMCID: PMC7662391 DOI: 10.3389/fnins.2020.592502
Source DB: PubMed Journal: Front Neurosci ISSN: 1662-453X Impact factor: 4.677
FIGURE 3SH-SY5Y cells cultured on WS2, graphene grown on sapphire and control substrates. (A) Typical optical microimages of SH-SY5Y cells grown on graphene on sapphire (G on sapphire), sapphire, WS2 and polystyrene (well) at day 9, after 3 days of hBDNF treatment (scale bar: 100μm). (B) Cell viability after 5, 9, and 12 days tested by WST-8. The results are reported as % over the polystyrene control sample. Histograms show (C) quantification of the percentage of differentiation, (D) average number of neurites per cell and (E) neurite length at different DIV of two independent experiments per substrate. Data reported as mean ± standard error of the mean (s.e.m.). Nonparametric Kruskal–Wallis test was used for statistical significance, with *p < 0.05, **p < 0.01, ***p < 0.001.
FIGURE 1Morphological, structural and optical characterization of WS2. (A) Large area AFM topological map (scale bar: 5 μm). The dashed white square indicates the zoomed area reported in panel (B), with a profile analysis of the patch (scale bar: 1 μm). The root mean square (RMS) values are reported on the maps. (C,D) Representative Raman and PL spectrum of few-layers WS2. (E–H) Maps of the ratio of the 2LA and A1g modes, of the Raman shift of the A1g mode, of the PL intensity, and of the PL peak position, respectively.
FIGURE 2Morphological and structural characterization of polycrystalline graphene on sapphire. (A) Large area AFM topological map (scale bar: 5 μm). The dashed white square indicates the zoomed area reported on the bottom. Right: line profiles across an atomic step (left) and a ridge (right) (scale bar: 1 μm). The RMS values are reported on the maps. (B) Representative Raman spectrum of polycrystalline graphene grown on sapphire. The 2D width is 34 cm–1, the D/G and the 2D/G intensity ratios are 0.18 and 2.1, respectively. (C–E) Raman maps of the 2D mode width, the D/G intensity ratio and the 2D/G intensity ratio, respectively.