| Literature DB >> 33168851 |
S S Huh1,2, Y S Kim1,2, W S Kyung1,2, J K Jung1,2, R Kappenberger3, S Aswartham3, B Büchner3,4, J M Ok5,6, J S Kim5,6, C Dong7,8, J P Hu7,8, S H Cho9, D W Shen9, J D Denlinger10, Y K Kim11,12, C Kim13,14.
Abstract
The nematic phase in iron based superconductors (IBSs) has attracted attention with a notion that it may provide important clue to the superconductivity. A series of angle-resolved photoemission spectroscopy (ARPES) studies were performed to understand the origin of the nematic phase. However, there is lack of ARPES study on LaFeAsO nematic phase. Here, we report the results of ARPES studies of the nematic phase in LaFeAsO. Degeneracy breaking between the [Formula: see text] and [Formula: see text] hole bands near the [Formula: see text] and M point is observed in the nematic phase. Different temperature dependent band splitting behaviors are observed at the [Formula: see text] and M points. The energy of the band splitting near the M point decreases as the temperature decreases while it has little temperature dependence near the [Formula: see text] point. The nematic nature of the band shift near the M point is confirmed through a detwin experiment using a piezo device. Since a momentum dependent splitting behavior has been observed in other iron based superconductors, our observation confirms that the behavior is a universal one among iron based superconductors.Entities:
Year: 2020 PMID: 33168851 PMCID: PMC7652889 DOI: 10.1038/s41598-020-75600-w
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Angle-resolved photoemission spectroscopy (ARPES) measurements on LaFeAsO. (a) Fermi surface map taken with 80 eV and p-polarized light. The inset shows the intensity near the M point multiplied by 10 to show the details. (b) Corresponding band structure at the and M points along the –M direction. The red and blue dashed line indicate dispersions of and bands, respectively. (c) and (d) Similar measurements but with s-polarized light. All the data were taken at 30 K.
Figure 2Temperature evolution of the electronic structure. (a) Temperature dependent ARPES data and (b) its second derivative near the point taken with 80 eV photon. The red dashed lines indicate dispersions of bands. (c) Temperature dependent energy distribution curves (EDCs) at , indicated by the yellow dashed line in Fig. 2b. Peak positions of and are indicated by black arrows. (d) Temperature dependent ARPES data and (e) its second derivative data near the M point taken with 21.2 eV photon energy, for which the cross section is higher. (f) Temperature dependent EDCs at , indicated by the yellow dashed line in (e).
Figure 3Electronic structures of twinned and detwinned LaFeAsO at M point. (a) Schematic illustration of experimental geometry. High symmetry cut of the (b) twinned and (c) detwinned sample along -direction near the point. The red and green dashed line indicated dispersion of and band, respectively. Tensile strain is transmitted to sample by applying 150 V to the piezo strain device.