| Literature DB >> 33128336 |
Yu Wu1, XiaoQing Liu2, Huijuan Zhang1, Jian Li3, Miao Zhou2, Liang Li4, Yu Wang1,3.
Abstract
Semiconductor p-n junctions have been explored and applied in photoelectrochemical (PEC) water splitting, but serious carrier recombinationpan> and sluggish oxygen evolution reaction (OER) dynamics have demanded further progress in p-n junction photoelectrode design. Here, via a controllable NH3 treatment, we construct sandwiched p-n homojunctions in three-unit-cells n-type SnS2 (n-SnS2 ) nanosheet arrays using nitrogen (N) as acceptor dopants. The optimal N-doped n-SnS2 (pnp-SnS2 ) with such unique structure achieves a record photocurrent density of 3.28 mA cm-2 , which is 21 times as high as that of n-SnS2 and the highest value among all the SnS2 photoanodes reported so far. Moreover, the stoichiometric O2 and H2 evolution from water was achieved with Faradaic efficiencies close to 100 %. The superior performance could be attributed to the facilitated electron-hole separation/transfer, accelerated surface OER kinetics, prolonged carrier lifetime, and improved structural stability.Entities:
Keywords: acceptor doping; charge separation/transfer; reaction kinetics; sandwiched p-n homojunctions; three unit cells
Year: 2020 PMID: 33128336 DOI: 10.1002/anie.202012734
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336