| Literature DB >> 32952217 |
Naisheng Jiang1,2, Jianxia Chen2, Tianyi Yu1, Albert Chao1, Liying Kang2, Ying Wu2, Kangmin Niu2, Ruipeng Li3, Masafumi Fukuto3, Donghui Zhang1.
Abstract
We investigated the effect of cyclic chain topology on the molecular ordering and thermal stability of comb-shaped polypeptoid thin films on silicon (Si) substrates. Cyclic and linear poly(N-decylglycine) (PNDG) bearing long n-decyl side chains were synthesized by ring-opening polymerization of N-decylglycine-derived N-carboxyanhydrides. When the spin-coated thin films were subjected to thermal annealing at temperatures above the melting temperature (T > T m), the cyclic PNDG films exhibited significantly enhanced stability against melt-induced dewetting than the linear counterparts (l-PNDG). When recrystallized at temperatures below the crystallization temperature (T < T c), the homogeneous c-PNDG films exhibit enhanced crystalline ordering relative to the macroscopically dewetted l-PNDG films. Both cyclic and linear PNDG molecules adopt cis-amide conformations in the crystalline film, which transition into trans-amide conformations upon melting. A top-down solvent leaching treatment of both l/c-PNDG films revealed the formation of an irreversibly physisorbed monolayer with similar thickness (ca. 3 nm) on the Si substrate. The physisorbed monolayers are more disordered relative to the respective thicker crystalline films for both cyclic and linear PNDGs. Upon heating above T m, the adsorbed c-PNDG chains adopt trans-amide backbone conformation identical with the free c-PNDG molecules in the molten film. By contrast, the backbone conformations of l-PNDG chains in the adsorbed layers are notably different from those of the free chains in the molten film. We postulate that the conformational disparity between the chains in the physically adsorbed layers versus the free chains in the molten film is an important factor to account for the difference in the thermal stability of PNDG thin films. These findings highlight the use of cyclic chain topology to suppress the melt-induced dewetting in polymer thin films.Entities:
Year: 2020 PMID: 32952217 PMCID: PMC7498153 DOI: 10.1021/acs.macromol.0c01205
Source DB: PubMed Journal: Macromolecules ISSN: 0024-9297 Impact factor: 5.985
Figure 1(a) Representative optical microscopic (OM) images of the 48 nm thick and 111 nm thick l-PNDG and c-PNDG films prepared on Si substrates after thermally annealed at 200 °C for 15 h.
Figure 2XRR curves of the 48 nm thick c-PNDG (red circles) and l-PNDG (blue triangles) films prepared on Si substrates after thermally annealed at 200 °C for 15 h. The solid black line corresponds to the best-fits of the electron density (ρ) profile against the distance (z) from the Si surface shown in the inset.
Figure 32D GIWAXD images of the 48 nm thick l-PNDG (top row) and c-PNDG (bottom row) films prepared on Si before, during, and after the thermal annealing process. The out-of-plane (q) and in-plane (q) directions are indicated by arrows.
Figure 4(a, b) One dimensional (1D) GIWAXD profiles of the as-cast l/c-PNDG films (48 nm in thickness) along (a) q and (b) q directions measured at T = 25 °C before annealing. (c) 1D GIWAXD profiles of the l/c-PNDG films measured at T = 200 °C during annealing, which were obtained by azimuthally integrating of the corresponding 2D images (Figure b,e) from 0 to 90° azimuthal angle with respect to the q-axis. The corresponding 1D GIWAXD along the q direction is shown in the inset. (d, e) 1D GIWAXD profiles of the annealed l/c-PNDG thin films along the (d) q and (e) q directions after being cooled to T = 25 °C. Note that c-PNDG and l-PNDG are shown in red and blue dots, respectively.
Figure 5(a) Schematics showing the all trans- and cis-amide backbone conformations of l/c-PNDG (R = n-decyl group). (b) Schematic illustration of the change in molecular packing of l/c-PNDG films upon heating/cooling. Possible chain folding and cyclic topology were omitted for clarity.
Figure 6(a, b) XRR curves of the c-PNDG (red circles) and l-PNDG (blue triangles) residual layers (i.e., irreversibly adsorbed layers) measured at (a) 25 °C and (b) 200 °C in situ, respectively. The solid black line corresponds to the best fits to the data based on the electron density (ρe) profile against the distance (z) from the Si surface shown in (c, d). The dotted line in (b) corresponds to the ρe value of bulk PNDG with a density of 0.95 g/cm3.
Figure 8Schematic representation of the molecular structure of l/c-PNDG with a cis-amide backbone conformation. The theoretical dimensions and electron densities of the backbone and side-chain regions are illustrated. The four-layer model used to fit the XRR curves of the adsorbed monolayers measured at 25 °C is shown in the inset.
Figure 7(a–d) 2D GIWAXD images of the (a, c) c-PNDG and (b, d) l-PNDG adsorbed layers on a Si substrate measured at 25 and 200 °C. (e, f) Line-cut GIWAXD profiles of the c-PNDG (red dots) and l-PNDG (blue dots) adsorbed layers along the q direction measured at (e) 25 and (f) 200 °C. Note that the 1D GIWAXD intensity data have been shifted vertically for clarity. The (100) peak position is indicated by the red arrows shown in (a) and (b). The red dashed line in (c) is to guide the eye. In (c), the reflection at q = 0.33 Å–1 is indicated by the black arrows.
XRR Fitting Parametersa for l/c-PNDG Adsorbed Monolayers at 25 and 200 °C
| polymer | σSi (Å) | ρe,1 ( | σ1 (Å) | ρe,2 ( | σ2 (Å) | ρe,3 ( | σ3 (Å) | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| 25 | 5.7 | 0.22 | 16.4 | 5.9 | 0.42 | 4.4 | 3.5 | 0.30 | 9.9 | 2.3 | |
| 4.6 | 0.26 | 18.0 | 4.6 | 0.42 | 4.4 | 3.8 | 0.30 | 9.9 | 4.5 | ||
| 200 | 3.0 | 0.29 | 38.4 | 9.9 | |||||||
| 3.5 | 0.31 | 38.7 | 12.8 |
σSi: silicon/inner n-decyl layer interface (σSi). ρe,1, ρe,2, and ρe,3 are the electron densities of the first, second, and third layers from the Si surface, respectively. h1, h2, and h3 are the thicknesses of the first, second, and third layers from the Si surface, respectively. σ1, σ2, and σ3 are the surface RMS roughnesses of the first, second, and third layers from the Si surface, respectively. Note that ρe,2, ρe,3, h2, and h3 were fixed to the theoretical dimension and electron density of the backbone and side chains derived from the previous report.[44] Note that the error values of h1, h2, and h3 are ±1.0 Å. The error values of σSi, σ1, σ2, and σ3 are ∼10% of the σ values. The error values of ρe,1, ρe,2, and ρe,3 are ∼10% of the ρe values.
Figure 9Representative AFM height images of the (a) l-PNDG and (b) c-PNDG adsorbed layers. The corresponding phase images are shown in (c) and (d), respectively. The scales of height and phase images are ±1 nm and ±2°, respectively. The scan size of all images is 1 μm × 1 μm.