Literature DB >> 32815214

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures.

Shanquan Chen1, Shuai Yuan1, Zhipeng Hou2,3, Yunlong Tang4, Jinping Zhang1, Tao Wang1, Kang Li5, Weiwei Zhao1,5, Xingjun Liu1, Lang Chen6, Lane W Martin7,8, Zuhuang Chen1,5.   

Abstract

Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
© 2020 Wiley-VCH GmbH.

Entities:  

Keywords:  ferroelectrics; heterostructures; magnetic materials; multiferroics; thin films; topological structures

Year:  2020        PMID: 32815214     DOI: 10.1002/adma.202000857

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  3 in total

Review 1.  Recent Advances in Multilayer-Structure Dielectrics for Energy Storage Application.

Authors:  Mengjia Feng; Yu Feng; Tiandong Zhang; Jinglei Li; Qingguo Chen; Qingguo Chi; Qingquan Lei
Journal:  Adv Sci (Weinh)       Date:  2021-09-14       Impact factor: 16.806

2.  Nonvolatile ferroelectric domain wall memory integrated on silicon.

Authors:  Haoying Sun; Jierong Wang; Yushu Wang; Changqing Guo; Jiahui Gu; Wei Mao; Jiangfeng Yang; Yuwei Liu; Tingting Zhang; Tianyi Gao; Hanyu Fu; Tingjun Zhang; Yufeng Hao; Zhengbin Gu; Peng Wang; Houbing Huang; Yuefeng Nie
Journal:  Nat Commun       Date:  2022-07-26       Impact factor: 17.694

3.  Smart Sensing Multifunctionalities Based on Barium Strontium Titanate Thin Films.

Authors:  Linghua Wang; Minmin Zhu; Yong Shao; Yida Zhao; Can Wei; Langfeng Gao; Yiping Bao
Journal:  Sensors (Basel)       Date:  2022-09-22       Impact factor: 3.847

  3 in total

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