| Literature DB >> 32778641 |
Zhonghao Liu1,2, Man Li3,4, Qi Wang3, Guangwei Wang5, Chenhaoping Wen6, Kun Jiang7, Xiangle Lu8,9, Shichao Yan6, Yaobo Huang4, Dawei Shen8,9, Jia-Xin Yin10, Ziqiang Wang7, Zhiping Yin11, Hechang Lei12, Shancai Wang13.
Abstract
Layered kagome-lattice 3d transition metals are emerging as an exciting platform to explore the frustrated lattice geometry and quantum topology. However, the typical kagome electronic bands, characterized by sets of the Dirac-like band capped by a phase-destructive flat band, have not been clearly observed, and their orbital physics are even less well investigated. Here, we present close-to-textbook kagome bands with orbital differentiation physics in CoSn, which can be well described by a minimal tight-binding model with single-orbital hopping in Co kagome lattice. The capping flat bands with bandwidth less than 0.2 eV run through the whole Brillouin zone, especially the bandwidth of the flat band of out-of-plane orbitals is less than 0.02 eV along Γ-M. The energy gap induced by spin-orbit interaction at the Dirac cone of out-of-plane orbitals is much smaller than that of in-plane orbitals, suggesting orbital-selective character of the Dirac fermions.Entities:
Year: 2020 PMID: 32778641 PMCID: PMC7417585 DOI: 10.1038/s41467-020-17462-4
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Crystal structure, tight-binding calculations and FS.
a Crystal structure of CoSn with space group P6/mmm (No. 191). b High-resolution STM topography with V = 1 V, I = 20 pA. Co3Sn surface (blue) and Sn surface (black) are indicated. c Atomic-resolved STM topography on Co3Sn plane with V = 500 mV, I = 100 pA. d The typical kagome band is produced by using the tight-binding method with single-orbital nearest-neighbor hopping. The black (red) curves are indicated for with (without) the inclusion of SOC. e 3D bulk BZ with marked high-symmetry points and two mirror planes: σ (Γ−K−M) and σ (Γ−A−H−K). plane is a projected 2D BZ. f Intensity plot at E ± 10 meV in 2D BZ. The red lines indicate high-symmetry directions and the first BZ projected on the (001) surface.
Fig. 2The typical kagome bands.
a–d Intensity plots at the K and H points along cut1 as indicated in Fig. 1f in σ and π geometries, respectively. Dirac points (DP) and flat bands (FB) are indicated by the white and red arrows, respectively. The flat band top (FB 1) locates about −0.07 eV and the flat bottom (FB 2) locates about −0.3 eV below EF. e–h Corresponding second derivative plots of (a–d). i MDCs around the Dirac cones at the K point in σ geometry show two close Dirac cones at about −0.6 eV below EF, as indicated by the dashed square in (a). The black sticks are guides to the bands. j MDCs around the Dirac cones at the H point in σ geometry show two Dirac cones at about −0.42 and −0.68 eV below EF, respectively, as indicated by the dashed square in (c).
Fig. 3The flat bands of CoSn.
a, b Intensity plots and corresponding second derivative plots along the and directions in σ geometry, respectively. Flat bands are indicated by the red dashed lines in (a, b). The red lines on the corresponding second derivative plots are DFT calculated bands renormalized by a factor of 1.5. The bandwidths of the flat bands are marked by the white squares and indicated by the black arrows. c EDCs of (a). d EDCs of (b). The flat bands (FB 1, and FB 2) and the parabolic band (QB) are indicated by the black dashed lines and open circles, respectively. e Scanning tunneling spectra (dI/dV) taken on the Co3Sn surface (red) and the Sn surface (yellow). Setpoint condition: V = 1 V, I = 100 pA.
Fig. 4The band calculations.
a, b DFT calculated bands along high-symmetry directions without and with SOC, respectively. Orbitals characters are indicated by the different colors. Flat bands (FB), Dirac points (DP), and band gaps induced by SOC at the Dirac points are indicated. c DOS from calculation and experiment. Up panel: Calculated total and orbital-resolved DOS of Co 3d narrowed 1.5 times in energy range. Down panel: Integrated EDCs in experiments. d DFT+DMFT calculation with SOC.