| Literature DB >> 32732421 |
Tian-Ran Wei1,2, Min Jin3, Yuecun Wang4, Hongyi Chen2, Zhiqiang Gao2, Kunpeng Zhao1,2, Pengfei Qiu2, Zhiwei Shan4, Jun Jiang5, Rongbin Li3, Lidong Chen6, Jian He7, Xun Shi8,2.
Abstract
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.Entities:
Year: 2020 PMID: 32732421 DOI: 10.1126/science.aba9778
Source DB: PubMed Journal: Science ISSN: 0036-8075 Impact factor: 47.728