| Literature DB >> 32729648 |
Bernhard von Boehn1, Michael Foerster2, Moritz von Boehn1, Jordi Prat2, Ferran Macià3, Blai Casals4, Muhammad Waqas Khaliq2, Alberto Hernández-Mínguez5, Lucia Aballe2, Ronald Imbihl1.
Abstract
Surface acoustic waves (SAW) allow to manipulate surfaces with potential applications in catalysis, sensor and nanotechnology. SAWs were shown to cause a strong increase in catalytic activity and selectivity in many oxidation and decomposition reactions on metallic and oxidic catalysts. However, the promotion mechanism has not been unambiguously identified. Using stroboscopic X-ray photoelectron spectro-microscopy, we were able to evidence a sub-nanosecond work function change during propagation of 500 MHz SAWs on a 9 nm thick platinum film. We quantify the work function change to 455 μeV. Such a small variation rules out that electronic effects due to elastic deformation (strain) play a major role in the SAW-induced promotion of catalysis. In a second set of experiments, SAW-induced intermixing of a five monolayers thick Rh film on top of polycrystalline platinum was demonstrated to be due to enhanced thermal diffusion caused by an increase of the surface temperature by about 75 K when SAWs were excited. Reversible surface structural changes are suggested to be a major cause for catalytic promotion.Entities:
Keywords: LEEM; PEEM; Surface acoustic waves; heterogeneous catalysis; work function
Year: 2020 PMID: 32729648 PMCID: PMC7693216 DOI: 10.1002/anie.202005883
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336
Figure 1Experimental set‐up for the excitation of SAWs on microstructured metal films on top of a piezoelectric material. a) LiNbO3 single crystals with IDTs and metal films. Left: Schematic view of a micro‐structured Pt film used for detection of SAW‐induced WF changes. Right: Schematic view of a micro‐structured Pt/Rh film constructed for the detection of SAW‐induced intermixing of the metallic constituents; Pt film thickness: ≈9 nm (left) and ≈40 nm (right), Rh film thickness: ≈5 ML (right). b) Photography of the micro‐structured Pt film. c) LEEM image of the microstructured Pt/Rh film. The area corresponding to the LEEM image is highlighted by a red circle in a. d) Schematic plot showing regions of compressive and tensile strain during propagation of a SAW.
Figure 2Determination of the local WF change during propagation of a ≈500 MHz SAW on a Pt film at 300 K. a) Stroboscopic XPEEM image of a Pt domain (upper part) and the adjacent LiNbO3 surface area (lower part) recorded with a photon energy of 300 eV at −0.5 eV bias voltage. In the raw data the SAW is visible only on the free LiNbO3 surface where it causes a variation of the surface potential of 1.3 eV amplitude. The red frame marks the window used for subsequent data analysis. b) Differential image of two stroboscopic XPEEM images phase‐shifted by Δφ=π. The total integration time is 70 min for the image. c) Photoelectron spectra of a Pt domain around the cut‐off energy as obtained from stroboscopic XPEEM image stacks for opposite SAW phases (0 and π). The vertical line marks the bias voltage at which the images in a and b were taken. d) Local WF change as function of the position in a propagating SAW, and numerical fit with a sine function. For this plot the data between the two white lines in b were averaged.
Figure 3SAW‐induced and thermally‐induced intermixing in a layered Rh/Pt surface. a) SAW‐induced Pt enrichment as a function of SAW application time (125 MHz, ≈0.1 W, 445 K substrate temperature). A Pt/Rh microstructure consisting of a 5 ML thick Rh film on top of a 40 nm Pt film as displayed in Figure 1 c is used. Shown is the Pt 4f intensity of Rh covered Pt area normalized with respect to the Pt 4f intensity of the uncovered Pt area. b) Thermally induced Pt enrichment on the surface of 3 ML thick Rh film on top of ≈40 nm Pt on LiNbO3. The Rh/Pt Auger intensity ratio is followed while slowly heating up. Intermixing starts above about 475 K, as reflected by a steep decrease of the Rh/Pt signal.