Literature DB >> 32661373

Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe2/MoSe2 bilayers.

Jiho Sung1,2, You Zhou1,2, Giovanni Scuri2, Viktor Zólyomi3,4, Trond I Andersen2, Hyobin Yoo2,5, Dominik S Wild2, Andrew Y Joe2, Ryan J Gelly2, Hoseok Heo1,2, Samuel J Magorrian3, Damien Bérubé6, Andrés M Mier Valdivia7, Takashi Taniguchi8, Kenji Watanabe8, Mikhail D Lukin2, Philip Kim2,7, Vladimir I Fal'ko9,10, Hongkun Park11,12.   

Abstract

Van der Waals heterostructures obtained via stacking and twisting have been used to create moiré superlattices1, enabling new optical and electronic properties in solid-state systems. Moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) result in exciton trapping2-5, host Mott insulating and superconducting states6 and act as unique Hubbard systems7-9 whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures feature atomic reconstruction and domain formation10-14. However, due to the nanoscale size of moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties have not been systematically investigated. Here we use near-0°-twist-angle MoSe2/MoSe2 bilayers with large rhombohedral AB/BA domains15 to directly probe the excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane electric dipole moments in opposite directions. The dipole orientation of ground-state Γ-K interlayer excitons can be flipped with electric fields, while higher-energy K-K interlayer excitons undergo field-asymmetric hybridization with intralayer K-K excitons. Our study reveals the impact of crystal symmetry on TMD excitons and points to new avenues for realizing topologically non-trivial systems16,17, exotic metasurfaces18, collective excitonic phases19 and quantum emitter arrays20,21 via domain-pattern engineering.

Entities:  

Year:  2020        PMID: 32661373     DOI: 10.1038/s41565-020-0728-z

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  5 in total

Review 1.  Excitons and emergent quantum phenomena in stacked 2D semiconductors.

Authors:  Nathan P Wilson; Wang Yao; Jie Shan; Xiaodong Xu
Journal:  Nature       Date:  2021-11-17       Impact factor: 49.962

2.  Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers.

Authors:  Ke Wu; Hongxia Zhong; Quanbing Guo; Jibo Tang; Jing Zhang; Lihua Qian; Zhifeng Shi; Chendong Zhang; Shengjun Yuan; Shunping Zhang; Hongxing Xu
Journal:  Natl Sci Rev       Date:  2021-07-30       Impact factor: 23.178

3.  A Scalable Network Model for Electrically Tunable Ferroelectric Domain Structure in Twistronic Bilayers of Two-Dimensional Semiconductors.

Authors:  Vladimir V Enaldiev; Fabio Ferreira; Vladimir I Fal'ko
Journal:  Nano Lett       Date:  2022-02-07       Impact factor: 12.262

4.  Interfacial ferroelectricity in marginally twisted 2D semiconductors.

Authors:  Astrid Weston; Eli G Castanon; Vladimir Enaldiev; Fábio Ferreira; Shubhadeep Bhattacharjee; Shuigang Xu; Héctor Corte-León; Zefei Wu; Nicholas Clark; Alex Summerfield; Teruo Hashimoto; Yunze Gao; Wendong Wang; Matthew Hamer; Harriet Read; Laura Fumagalli; Andrey V Kretinin; Sarah J Haigh; Olga Kazakova; A K Geim; Vladimir I Fal'ko; Roman Gorbachev
Journal:  Nat Nanotechnol       Date:  2022-02-24       Impact factor: 40.523

5.  Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors.

Authors:  Fábio Ferreira; Vladimir V Enaldiev; Vladimir I Fal'ko; Samuel J Magorrian
Journal:  Sci Rep       Date:  2021-06-28       Impact factor: 4.379

  5 in total

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