| Literature DB >> 32661373 |
Jiho Sung1,2, You Zhou1,2, Giovanni Scuri2, Viktor Zólyomi3,4, Trond I Andersen2, Hyobin Yoo2,5, Dominik S Wild2, Andrew Y Joe2, Ryan J Gelly2, Hoseok Heo1,2, Samuel J Magorrian3, Damien Bérubé6, Andrés M Mier Valdivia7, Takashi Taniguchi8, Kenji Watanabe8, Mikhail D Lukin2, Philip Kim2,7, Vladimir I Fal'ko9,10, Hongkun Park11,12.
Abstract
Van der Waals heterostructures obtained via stacking and twisting have been used to create moiré superlattices1, enabling new optical and electronic properties in solid-state systems. Moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) result in exciton trapping2-5, host Mott insulating and superconducting states6 and act as unique Hubbard systems7-9 whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures feature atomic reconstruction and domain formation10-14. However, due to the nanoscale size of moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties have not been systematically investigated. Here we use near-0°-twist-angle MoSe2/MoSe2 bilayers with large rhombohedral AB/BA domains15 to directly probe the excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane electric dipole moments in opposite directions. The dipole orientation of ground-state Γ-K interlayer excitons can be flipped with electric fields, while higher-energy K-K interlayer excitons undergo field-asymmetric hybridization with intralayer K-K excitons. Our study reveals the impact of crystal symmetry on TMD excitons and points to new avenues for realizing topologically non-trivial systems16,17, exotic metasurfaces18, collective excitonic phases19 and quantum emitter arrays20,21 via domain-pattern engineering.Entities:
Year: 2020 PMID: 32661373 DOI: 10.1038/s41565-020-0728-z
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 39.213