| Literature DB >> 32627892 |
Wenzhen Wang1, Hua Meng1, Huanzhen Qi1, Haitao Xu2, Wenbin Du1, Yiheng Yang1, Yongsheng Yi1, Shengqi Jing1, Shanhu Xu1, Feng Hong3, Juan Qin1, Jian Huang1, Zhan Xu1, Yanyan Zhu1, Run Xu1, Jianming Lai1, Fei Xu3, Linjun Wang1, Jingtao Zhu4.
Abstract
High-quality perovskite single crystals with large size are highly desirable for the fundamental research and high energy detection application. Here, a simple and convenient solution method, featuring continuous-mass transport process (CMTP) by a steady self-supply way, is shown to keep the growth of semiconductor single crystals continuously stable at a constant growth rate until an expected crystal size is achieved. A significantly reduced full width at half-maximum (36 arcsec) of the (400) plane from the X-ray rocking curve indicates a low angular dislocation of 6.8 × 106 cm-2 and hence a higher crystalline quality for the CH3 NH3 PbI3 (MAPbI3 ) single crystals grown by CMTP as compared to the conventional inverse temperature crystallization (ITC) method. Furthermore, the CMTP-based single crystals have lower trap density, reduced by nearly 200% to 4.5 × 109 cm-3 , higher mobility increased by 187% to 150.2 cm2 V-1 s-1 , and higher mobility-lifetime product increased by around 450% to 1.6 × 10-3 cm2 V-1 , as compared with the ITC-grown reference sample. The high performance of the CMTP-based MAPbI3 X-ray detector is comparable to that of a traditional high-quality CdZnTe device, indicating the CMTP method as being a cost-efficient strategy for high-quality electronic-grade semiconductor single crystals.Entities:
Keywords: X-ray detectors; high carrier transport properties; perovskite single crystals; self-supply solution growth
Year: 2020 PMID: 32627892 DOI: 10.1002/adma.202001540
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849