Ferroelectric field-effect transistors for logic and in-situ memory applications.

The separation of processing and memory units in von Neumann architecture creates issues with energy consumption and speed mismatches, which is a huge obstacle on the road of integrated-circuit development. Potentially, the excellent performance of two-dimensional materials field-effect transistors controlled by organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer could clear the path for the development of next-generation microelectronics. Here, we combined P(VDF-TrFE) polymer and molybdenum disulfide (MoS2) nanoflakes to fabricate a horizontal dual-gate ferroelectric field-effect transistor (HDG-FeFET) device. This device can provide in-situ memory of logic results while processing the AND logic function. During the logic operations, the logic output state-1/state-0 current ratio approached 105. After 900 s, the corresponding non-volatile memory state-1/state-0 current ratio remains at 104. This type of transistor is expected to provide a promising in-memory computing solution for next-generation computing architecture.