External driving of the Fermion reservoirs interacting with a nanoscale charge-conductor is shown to enhance its mechanical stability during resonant tunneling. This counterintuitive cooling effect is predicted despite the net energy flow into the device. Field-induced plasmon oscillations stir the energy distribution of charge carriers near the reservoir's chemical potentials into a nonequilibrium state with favored transport of low-energy electrons. Consequently, excess heating of mechanical degrees of freedom in the conductor is suppressed. We demonstrate and analyze this effect for a generic model of mechanical instability in nanoelectronic devices, covering a broad range of parameters. Plasmon-induced stabilization is suggested as a feasible strategy to confront a major problem of current-induced heating and breakdown of nanoscale systems operating far from equilibrium.
External driving of the Fermion reservoirs interacting with a nanoscale charge-conductor is shown to enhance its mechanical stability during resonant tunneling. This counterintuitive cooling effect is predicted despite the net energy flow into the device. Field-induced plasmon oscillations stir the energy distribution of charge carriers near the reservoir's chemical potentials into a nonequilibrium state with favored transport of low-energy electrons. Consequently, excess heating of mechanical degrees of freedom in the conductor is suppressed. We demonstrate and analyze this effect for a generic model of mechanical instability in nanoelectronic devices, covering a broad range of parameters. Plasmon-induced stabilization is suggested as a feasible strategy to confront a major problem of current-induced heating and breakdown of nanoscale systems operating far from equilibrium.
The rapid buildup of high energy
density in nanoscale devices operating far from equilibrium holds
promise for the discovery of new phenomena and for new applications.
It is a major source of concern, however, when overheating hinders
the mechanical stability and thus the deterministic input–output
relation of such devices. For example, in single molecule junctions
the Fermion current is coupled to mechanical degrees of freedom (molecular
vibrations). In the off-resonant electronic tunneling regime, vibrational
excitations are minor. Their effect is apparent in the current–voltage
curves but the mechanical stability of the device is hardly affected.
In contrast, in the resonant tunneling regime the molecule undergoes
successive charging and discharging events which are often associated
with vibrational heating, conformational changes, or chemical bond
rupture, leading to a mechanical breakdown.Mechanical instability
of this sort was extensively studied and
analyzed theoretically[1−9] and experimentally.[10−14] When the charged molecule is associated with a repulsive potential
energy surface for the nuclei,[15−17] charge transport-induced dissociation
is inevitable. In other cases where both the uncharged and charged
potential energy surfaces are bonding, the successive charging and
discharging events are often associated with inelastic scattering
and, consequently, vibrational heating. This phenomenon is especially
acute in the limits of high bias and weak vibronic coupling, where
vibrational cooling (e.g., via electron–hole pair creation)
becomes ineffective. Remedies for vibrational heating were proposed,
for example, by manipulating the electrode density of states in the
off resonant transport regime[18,19] as well as in the resonant
transport regime,[7] or alternatively by
increasing the ambient temperature.[8] These
strategies, however, are challenging from experimental perspective,
as they require careful control of the electrode’s material
and/or the ambient temperature.In this work, we propose a new
strategy to control the energy content
of the nanodevice by time-dependent driving of the external Fermion
reservoirs, namely, inducing plasmon oscillations. In particular,
we show that driving of a Fermion reservoir in a molecular junction
helps to keep a low level of vibrational excitation on the molecule
in the resonant transport regime. This implies that a mechanically
unstable junction can be made stable under the field operation. Moreover,
we show that while the mechanical stability increases significantly,
the current through the device is compromised only mildly.Our
results are based on a numerical investigation and theoretical
analysis. Focusing on weak molecule-lead coupling (where vibrational
instability is acute[4,8]), the theoretical treatment is
based on time-averaged Born-Markov master equations (see SI). This enables one to take full account for
the electron interaction with molecular vibrations and with the driving
field, as long as the driving period is short on the time scale of
the field-free junction dynamics (for a complementary discussion of
the adiabatic regime, where the junction undergoes significant changes
within a single driving period, see ref (20)).As a prototype, we consider a model
system which demonstrates vibrational
instability in the resonant transport regime.[1−5,7−10] A single molecular orbital coupled to a vibrational mode is represented
by the Holstein Hamiltonian,[21]H = ε1a1†a1 + ℏΩc†c + λa1†a1 (c† + c) ≡ ĥ1a1†a1 + ĥ0a1a1†, where a1† creates
an electron in the molecular orbital. The vibrational Hamiltonians, ĥ0 = ℏΩc†c and ĥ1 = ε1 + ℏΩc†c + λ(c† + c), correspond to
the empty and charged states of the orbital, respectively, where c† creates a vibration quantum on the
molecule at a frequency Ω, ε1 represents the
charging energy of the molecular orbital, and λ is the vibronic
coupling parameter. The corresponding eigenstates of H are products, |n⟩|ν⟩, where |n⟩ ∈ |0⟩, |1⟩,
is the electronic occupation state, and the vibrational states are
defined by . The molecular
system is coupled to two
reservoirs (“right” and “left” leads)
of noninteracting Fermions, where the reservoir Hamiltonians read , and the molecule-lead couplings read, . These couplings are
captured in the spectral
density, , which is constant in the wide band limit, J(ε) ≈ Γ.In order to account for the plasmon,
we consider here an idealized
model of adiabatic reservoir excitation,[22−30] ignoring plasmon broadening effects, for example, via direct electron–hole
pair creation. This model was originally proposed in studies of photoassisted
tunneling in superconducting junctions,[22−24] and was later adopted
in studies of plasmon-driven atomic point contacts[25−27] and molecular
junctions.[28−33] According to the model, the field induces time-dependent changes
in the chemical potentials, that is, , where, g(t) = g(t + τ). In the common case
of harmonic (AC) driving, g(t) = α cos(ωt), where ω ≡ 2π/τ
is the field frequency. Notice that a uniform driving of the molecule
itself by a time-dependent gate potential is formally equivalent to
a time-dependence of the reservoir chemical potentials.[33] Therefore, such driving (when feasible, experimentally)
should also suppress the vibrational instability during resonant transport.
Nevertheless, in the present work we focus on stabilization induced
by the lead plasmons. In particular, the source lead is driven, where
the molecular charging energy is kept fixed (assuming the potential
drop is restricted to the contacts). A unitary transformation shifts
the time-dependence to the molecule-lead coupling operators,[33,34], where
the full (transformed) Hamiltonian
reads .Our main observable of interest is the level of vibrational excitation
on the molecule at steady state. In terms of the system eigenstate
populations, ρ(, this readsWhen dynamical changes
in the populations of the molecular eigenstates
are much slower than the periodic driving (see ref (34) and SI), the populations, {ρ(}, can be obtained by a quantum master
equationwhere, , and is the transition rate from the (m,ν) to the (n,ν) molecular eigenstate,
due to electron exchange with the Kth lead, averaged
over the driving period. The respective steady state current (from
the Kth lead) reads[34]Notice that this treatment is restricted to a typical scenario
in tunneling junctions, where the electronic coupling between the
(molecular) system and the electrodes is weak, namely, small in comparison
to the systems’ level spacing. Consequently, the system dynamics
can be well approximated by a Markovian quantum master equation[35,36] in the wide band limit,[34] where the appealing
result of effective time-independent rates is trivially justified
in the absence of the field. However, it remains valid also with increasing
intensity of the driving field, as long as two conditions are met
(see SI for a detailed discussion): (i)
The transformed time-dependent molecule-lead coupling functions ({H(t)}) remain
band-limited in the frequency domain, complying with the wide band
approximation. (ii) The driving field frequency must be larger than
the rate of change in the eigenstate populations (which implies, , where ν0 is the highest
occupied vibration quantum number). Notice that this limitation on
the driving-field frequency does not relate to the frequency of coherent
vibrational dynamics in the system (Ω), which can be ignored
as long as Γ ≪ ℏΩ.For a periodic driving field, is expressed as a sum over transition rates
to virtual electrodes, which are different replicas of that lead (see Scheme , and SI). In each replica (a Floquet channel[37,38]) the Fermi distribution and the spectral density are displaced with
respect to the field-free functions by an integer (l) multiplication of ℏω. The molecule-lead
coupling is distributed among the replicas where the coupling matrix
element is proportional to the lth Fourier component
of the (transformed) periodic field. Formally, one obtainswhereis a generalized Fermi function,[23] corresponding to the nonequilibrium state of
the driven lead. The displaced functions, f((E) = f((E – ℏωl) are expressed in terms of the nondriven lead Fermi function, , where μ is the lead chemical
potential and T is the temperature. g̅( is the lth Fourier component
of the (transformed) periodic field, , and ⟨ν|ν⟩ is
the vibrational
Franck–Condon (FC) overlap.
Scheme 1
Illustration of a Biased Molecular
Junction Under Periodic Driving
Biased molecular
junction
before (left) and after (right) applying a driving field (α
cos(ωt)) on the left electrode. The letters
L, M, and R stand for the left electrode, the molecule, and the right
electrode, respectively. The molecular energy level is represented
by the solid line. μL (μR) denotes
the chemical potential of the left (right) electrode in the absence
of the driving field. Under the field, the left electrode is replaced
by replicas associated with displaced chemical potentials, μL + ℏωl, l =
0, ±1, ±2 and so forth.
Illustration of a Biased Molecular
Junction Under Periodic Driving
Biased molecular
junction
before (left) and after (right) applying a driving field (α
cos(ωt)) on the left electrode. The letters
L, M, and R stand for the left electrode, the molecule, and the right
electrode, respectively. The molecular energy level is represented
by the solid line. μL (μR) denotes
the chemical potential of the left (right) electrode in the absence
of the driving field. Under the field, the left electrode is replaced
by replicas associated with displaced chemical potentials, μL + ℏωl, l =
0, ±1, ±2 and so forth.In Figure , the
steady state observables are plotted for the above model in the zero-temperature
limit, where vibrational instability is acute[8] and the field effect should be most pronounced. (Notice that although
level broadening effects are missing in eq , the corresponding errors in the presented
steady state observables are negligible even for KBT < Γ, since Γ is smaller than
the energy gaps between μ and any
molecular charging energy). As one can see, the onset of a plasmon
driving field at the left electrode, gL(t) = αcos(ωt), leads to a significant reduction of the vibrational excitation
energy. As the field intensity increases farther, the level of vibration
excitation tends to increase (see Figure a) but remains lower than its field-free
value throughout the sampled region.
Figure 1
Vibrational energy ⟨c†c⟩ (a) and the steady
state current (b) as
functions of the driving field intensity for different field’s
frequencies. ℏΩ = 0.1 eV is the vibrational
frequency, ε1 = 3ℏΩ
is the elastic charging energy, ΓL = ΓR = ℏΩ/1000 is the coupling to
the left and right leads, μL = ε1 + ℏΩ + 0.01 eV and μR = −μL are the leads’ chemical potentials,
and λ = ℏΩ/10 is the vibronic
coupling parameter. The lead temperature was set to 0 K.
Vibrational energy ⟨c†c⟩ (a) and the steady
state current (b) as
functions of the driving field intensity for different field’s
frequencies. ℏΩ = 0.1 eV is the vibrational
frequency, ε1 = 3ℏΩ
is the elastic charging energy, ΓL = ΓR = ℏΩ/1000 is the coupling to
the left and right leads, μL = ε1 + ℏΩ + 0.01 eV and μR = −μL are the leads’ chemical potentials,
and λ = ℏΩ/10 is the vibronic
coupling parameter. The lead temperature was set to 0 K.The field-induced stabilization can be qualitatively understood
by analysis of eq in
the weak molecule-lead and vibronic coupling limits (see SI). Indeed, the vibrational excitation is shown
to be associated with a steady state inverse temperaturewhere are rates of electron (hole) transfer into
the molecule. Each transfer event is associated with a gain (loss)
of the electronic charging energy, ε̅ = ε1 – λ2/(ℏΩ)2, plus p vibration quanta, where, f̅( (ε) = 1–f̅( (ε), and f̅( (ε) is the generalizd
Fermi function (eq ).The numerator and denominator refer, respectively, to cooling and
heating pathways. Scheme a corresponds to one of the heating pathways included in W1W0, where an electron enters
the molecule from the left electrode, and exits to the right electrode
while emitting a vibration quantum. In the absence of the field, the
molecular charging energy is within the Fermi conductance window set
by μL. Under illumination, however, the original
electrode is replaced by replicas with shifted chemical potentials,
μL + ℏωl (l = 0, ±1, ±2, and so forth), such that the charging energy
is outside the conductance window for all replicas with l < 0. Since the molecule-lead coupling is divided among the replicas
(including those associated with l < 0), the electron
hopping rate into the molecule decreases, and consequently the denominator
in eq becomes smaller
(heating is suppressed). Scheme b refers to the complementary cooling pathway (included
in W1W0 in the numerator).
In this process, the molecular charging step is associated with a
lower energy, and therefore it exits the conductance window only for
replicas with l < −1. Consequently, the
reduction of the numerator in eq is smaller than the reduction of the denominator (cooling
is less suppressed than heating). Scheme c corresponds to a cooling pathway via electron–hole
pair creation at the driven electrode (also included in W1W0). Here the inelastic cooling
process is Pauli blocked in the absence of the field. Under illumination,
however, W1 becomes finite for replicas
with l ≤ −1 where W0 is allowed for l ≥ −1 (see Scheme c), leading to an
increase of the numerator (enhanced cooling) in eq . Notice that the complementary process of
heating by electron–hole pair elimination (included in W1W0) is also enabled only under
illumination, leading to increasing denominator (enhanced heating)
but to a lesser extent, since W1 and W0 obtain finite values only for l ≥ 0 and l ≤ −2, respectively,
where l = −1 is excluded (see Scheme d). Similar comparisons for
the entire set of heating and cooling processes show that the net
effect of the field is to increase the numerator/denominator ratio,
resulting in lowering of the effective vibrational temperature.
Scheme 2
Field-induced Heating and Cooling Pathways
Representation of different
molecular heating (a,d) and cooling (b,c) processes in a field-driven
junction, induced by sequential electron transfer events. Blue (red)
corresponds to a vibrational quantum (ℏΩ)
transfer from (to) the molecule during the inelastic process. Under
the field, the left electrode is replaced by replicas associated with
displaced chemical potentials, μL + ℏωl, l = 0, ±1, ±2 and so forth. The energy
difference between the lead chemical potential and the elastic charging
energy is marked as Δ + ℏΩ.
Field-induced Heating and Cooling Pathways
Representation of different
molecular heating (a,d) and cooling (b,c) processes in a field-driven
junction, induced by sequential electron transfer events. Blue (red)
corresponds to a vibrational quantum (ℏΩ)
transfer from (to) the molecule during the inelastic process. Under
the field, the left electrode is replaced by replicas associated with
displaced chemical potentials, μL + ℏωl, l = 0, ±1, ±2 and so forth. The energy
difference between the lead chemical potential and the elastic charging
energy is marked as Δ + ℏΩ.We now return to a detailed analysis of the numerical
results in Figure . While the simulations
account for multiphonon transitions (FC factors in eq are calculated to all orders in
the vibronic coupling), given the relatively small vibronic coupling
parameter, and since the left chemical potential is just above ε̅
+ ℏΩ, the results in Figure are dominated by the single-quantum
vibrational heating (cooling) pathways discussed above. As the driving
field intensity increases, the moleule-lead coupling is partially
shifted from lead replicas which facilitate (block) heating (cooling)
pathways (μL + ℏωl >
ε̅ + ℏΩ, namely, , see Scheme ) toward
replicas for which these pathways become closed
(opened). Quantitatively, the global vibrational cooling effect, demonstrated
in Figure a, is shown
to depend on the specific parameters of the driving field. The relative
contributions of the different electrode replicas to the charge transfer
rates are proportional to the Fourier components of the (transformed)
periodic field, that is, , in the present case, where the distribution
over the different channels (different l’s)
broadens with increasing field intensity (α) at any field frequency
(ω). When the field frequency is larger than Δ, only replicas
associated with non-negative l facilitate dominant
heating pathways, for example, W1W0, and suppress cooling pathways, for example, W0W1. As the field intensity increases,
the distribution over l is broadened such that negative l values are also included, resulting in a net relative
decrease of heating versus cooling. Since the dominant replica at
low intensities is associated with l = 0, the observed
drop in the vibrational excitation level follows the corresponding
Bessel function, , toward its first zero (at α ≈
2.4ℏω). As the field intensity increases
farther, the vibrational excitation level increases again, owing to
the increase in , as well as to the suppression of vibrational
cooling pathways (associated with W1W0, W0W–1) when the distribution over l is shifted
toward l < −1 (see Scheme ). For field frequencies smaller than Δ,
the range of replicas facilitating (blocking) the dominant heating
(cooling) pathways expands
to also include negative l values. Therefore, the
vibrational excitation level is
not suppressed as the field intensity increases until the distribution
over l is broadened beyond this range. Given the
Bessel weights, this occurs at α ∼ Δ, where for
α ≳ Δ the vibrational excitation level drops sharply,
reflecting the simultaneous oscillatory decay of several Bessel functions
(associated with ). As discussed above, when the field intensity
increases farther (and the distribution over l broadens)
to the extent that additional cooling pathways are suppressed (in
the weak vibronic coupling limit, the stability region extends over
∼2ℏΩ, see Figure a), the global cooling effect is diminished
and the vibrational excitation level starts to increase.Interestingly,
the current, as seen in Figure b, is only mildly affected by the increasing
field intensity. Indeed, as the field intensity increases, transport
channels which are within the resonant Fermi window in the absence
of the field, may exit that window for an increasing number of lead
replicas, resulting in a current-drop. Notice, however, that the effect
is minor, since the relative current-drop is limited to 50% (as shown
by Floquet analysis, see ref (33)), whereas the relative drop in the vibrational heating
is much larger (see Figure a). Moreover, unlike vibrational heating, the current itself
is dominated by elastic transport (see SI, when, ). Therefore, the current drops only for
replicas with μL + ℏωl < ε̅, whereas the vibrational stabilization becomes
prominent already when, μL + ℏωl < ε̅ + ℏΩ. Indeed,
the observed current-dependence on the field parameters (Figure b) can be explained
by following the arguments used in the analysis of the vibrational
stabilization (Figure a), where Δ is replaced by Δ + ℏΩ. In particular, when ℏω < ℏΩ, an “intensity window” appears
(Δ < α < Δ + ℏΩ), in which the mechanical stabilization becomes effective, while
the current is nearly unaffected.The phenomenon of vibrational
cooling by the driving field is also
robust with respect to the static bias voltage applied on the junction
as shown in Figure a. In the absence of the driving field, the excitation level increases
in steps as a function of the bias voltage, which reflects increases
of the left chemical potential by multiplications of ℏΩ.[39] In the presence of the field,
the excitation level is shown to drop down regardless of the static
bias applied (except for a minor increase at intermediate field intensities,
attributed to the opening (closing) of two-phonon heating (cooling)
pathways by high lying lead replicas).
Figure 2
Vibrational
energy ⟨c†c⟩ as a function of the driving field intensity
for different static bias voltages (a), vibronic coupling strengths
(b), and asymmetric molecule-lead couplings (c). The fixed model parameters
are ℏΩ = 0.1 eV, ε1 = 3ℏΩ, μR = −μL, ℏω = 0.02 eV, ΓR = ℏΩ/1000, the lead temperature
was set to 0 K, and unless marked otherwise: ΓL =
ΓR, λ = ℏΩ/10,
μL = ε1 + ℏΩ + 0.01 eV.
In Figure b, we
demonstrate the effect of the vibronic coupling strength, , on the level of vibrational excitation.
For large vibronic coupling, the excitation level is kept small even
in the absence of the driving field, owing to effective cooling by
(multiphonon) electron–hole pair creation at the left lead.
However, as decreases, the multiphonon cooling is suppressed,
resulting in high levels of vibrational excitation in the absence
of the driving field and a substantial field-induced cooling effect.Vibrational
energy ⟨c†c⟩ as a function of the driving field intensity
for different static bias voltages (a), vibronic coupling strengths
(b), and asymmetric molecule-lead couplings (c). The fixed model parameters
are ℏΩ = 0.1 eV, ε1 = 3ℏΩ, μR = −μL, ℏω = 0.02 eV, ΓR = ℏΩ/1000, the lead temperature
was set to 0 K, and unless marked otherwise: ΓL =
ΓR, λ = ℏΩ/10,
μL = ε1 + ℏΩ + 0.01 eV.A similar effect is apparent
also in Figure c,
where the level of vibrational excitation
is plotted as a function of the field’s intensity for different
asymmetric couplings to the left and right electrodes. As the coupling
to the drain (right) electrode becomes large in comparison to the
coupling to the source (left) electrode (ΓL ≪
ΓR), inelastic processes involving the left electrode
become much slower in comparison to processes involving transport
to the right electrode. In particular, cooling by electron–hole
pair creation is suppressed with growing asymmetry.[40,41] In the absence of the field, increasing the ratio, ΓR/ΓL therefore results in higher vibrational excitation
levels (which are shown to saturate when cooling by electron–hole
creation already becomes ineffective). In the presence of the field,
the excitation level is suppressed regardless of the ratio, ΓR/ΓL, even when electron–hole cooling
is ineffective. This demonstrates that plasmon oscillations induce
cooling via transport processes involving both leads on top of enhancing
cooling processes by electron–hole pair creation at the leads.We now consider the stabilization due to plasmon oscillations at
finite temperatures. In the absence of a driving field, as the temperature
rises, the level of excitation diminished, as was studied before.[8] However, even high temperatures may not ensure
mechanical stability, especially with increasing bias. A driving field
can compensate for this instability, as demonstrated in Figure . Setting the bias to the highest
value studied in Figure a, the vibrational excitation is shown to decrease with increasing
field’s intensity, for a wide experimentally relevant temperature
range. Notice that the zero-temperature result is reproduced also
for a range of finite temperatures, as long as the Fermi function
width is smaller than the other relevant energy scales.
Figure 3
Vibrational
energy ⟨c†c⟩ as a function of the driving field intensity
for different temperatures. The model parameters are ℏΩ = 0.1 eV, ε1 = 3ℏΩ, ΓL = ΓR = ℏΩ/1000, Φ = 10.5ℏΩ, λ
= ℏΩ/10, ℏω = 0.02 eV.
Vibrational
energy ⟨c†c⟩ as a function of the driving field intensity
for different temperatures. The model parameters are ℏΩ = 0.1 eV, ε1 = 3ℏΩ, ΓL = ΓR = ℏΩ/1000, Φ = 10.5ℏΩ, λ
= ℏΩ/10, ℏω = 0.02 eV.In conclusion, plasmon oscillations
in the leads are shown to suppress
vibrational heating of a nanoscale conductor during resonant transport.
Our results demonstrate that the excess energy associated with the
induced plasmon oscillations does not find its way into the mechanical
excitation of the conductor. On the contrary, pumping energy into
the leads is shown to suppress energy flow into the conductor. The
emerging physical picture is that the field stirs the distribution
of charge carriers in the lead into a new nonequilibrium state, in
which high-energy electrons are driven out of the effective inelastic
transport “window”. In detail, the rate of inelastic
resonant transport depends on both the Fermi distributions and Franck–Condon
factors (eq ). Vibrational
heating (cooling) in this regime is attributed to high (low) energy
electrons entering the molecule and leaving it at a lower (higher)
energy. The field suppresses heating by exciting high-energy electrons
to yet higher-energies, making them irrelevant to the resonant transport
processes through damped Franck–Condon factors. In contrast,
low energy electrons (far below the chemical potential), which promote
vibrational cooling, are less prone to absorb energy from the field,
since transitions to (occupied) higher energy states are Pauli blocked.
This redistribution of charge carriers in the leads favors resonant
transport of low energy electrons over high energy electrons, resulting
in a net vibrational cooling effect within the conductor. It was recently
proposed that increasing the ambient temperature can lead to mechanical
stabilization during resonant transport.[8] Indeed, increasing the lead temperature should promote vibrational
cooling in a similar way. Nevertheless, here we show that an efficient
cooling can be achieved in a controlled manner while keeping the lead
temperature as low as possible. Moreover, plasmon oscillations can
be designed in order to tailor specific nonequilibrium distributions
to a desired cooling target. These ideas are currently under study
with the aim of proposing efficient schemes for mechanical stabilization
for nanoscale conductors operating under nonequilibrium conditions.
Authors: E-Dean Fung; David Gelbwaser; Jeffrey Taylor; Jonathan Low; Jianlong Xia; Iryna Davydenko; Luis M Campos; Seth Marder; Uri Peskin; Latha Venkataraman Journal: Nano Lett Date: 2019-03-05 Impact factor: 11.189
Authors: Brian Capozzi; Jonathan Z Low; Jianlong Xia; Zhen-Fei Liu; Jeffrey B Neaton; Luis M Campos; Latha Venkataraman Journal: Nano Lett Date: 2016-05-19 Impact factor: 11.189
Authors: Haixing Li; Nathaniel T Kim; Timothy A Su; Michael L Steigerwald; Colin Nuckolls; Pierre Darancet; James L Leighton; Latha Venkataraman Journal: J Am Chem Soc Date: 2016-11-30 Impact factor: 15.419