| Literature DB >> 32537450 |
Lei Liu1, Zhongchen Zhao2, Zhengqiang Hu2, Xiangjun Lu1, Shijia Zhang2, Ling Huang2, Yi Zheng2, Hongsen Li2.
Abstract
Sodium-ion capacitors (NICs) that have integrated the dual advantages of the high output of supercapacitors and the high energy density of batteries have stimulated growing attention for the next generation of practical electrochemical energy storage devices. The last years have seen the unprecedentedly rapid emergence of ilmenite materials, which present great promise in the realm of energy storage. However, NICs based on ilmenite materials have been scarcely researched so far. Instead, most of the current devices explored applied flammable liquid electrolytes, leading to a concern about unexpected leakage and potential safety problems. Herein, a quasi-solid-state NIC is constructed by employing the prepared uniformly layered FeTiO3 assemblies consisting of fine nanoparticles as anode and sodium ion conducting gel polymer as electrolyte. The resulting device delivers a high-energy-high-power density (79.8 Wh kg-1, 6,750 W kg-1), putting it among the state-of-the-art NICs. Furthermore, the assembled quasi-solid-state device also manifests long-term cycling stability over 2,000 cycles with a capacity retention ~80%. The uniformly layered FeTiO3 has great potential in developing low-cost and high-performance electrodes for the next generation of sodium and other metal ions-based energy storage devices.Entities:
Keywords: FeTiO3; high performances; layered structure; quasi-solid-state; sodium ion capacitor
Year: 2020 PMID: 32537450 PMCID: PMC7267067 DOI: 10.3389/fchem.2020.00371
Source DB: PubMed Journal: Front Chem ISSN: 2296-2646 Impact factor: 5.221
Scheme 1Schematic illustration for preparation of the L-FTO.
Figure 1(A–B) FESEM images, (D,E) TEM images, (F) HRTEM image, (G) the corresponding SAED pattern of the obtained L-FTO.
Figure 2(A) XRD pattern, (B) TG curve, (C) High-resolution Fe 2p, and (D) Ti 2p XPS spectra of the L-FTO.
Figure 3Electrochemical characteristics of the L-FTO in half cells. (A) CV curves of L-FTO electrode at various scan rates from 0.1 to 2 mV s−1. (B) The corresponding voltage profiles and rate capability (C) at different current densities from 0.1 to 10 A g−1. (D) Plot of log (i) vs. log (ν) of anodic/cathodic peaks from CV scans and b-value determination lines. (E) Separation of the pseudocapacitive and diffusion currents at a scan rate of 0.7 mV s−1. (F) Pseudocapacitive contribution ratio at different scan rates from 0.2 to 2 mV s−1. (G) The cycling performance with coulombic efficiency over 2,000 cycles at 1 A g−1.
Figure 4(A) Schematic illustration of the L-FTO//AC quasi-solid-state NIC device. (B) CV profiles of L-FTO and AC in half cells (top) and full cell of the quasi-solid-state NIC device (bottom) at scan rate of 0.5 mV s−1. (C) Typical galvanostatic charge-discharge curves at different current densities. (D) Ragon-plot of the L-FTO//AC quasi-solid-state NIC device in comparison with other reported results (Chen et al., 2011; Yin et al., 2012; Li et al., 2016b; Le et al., 2017; Yan et al., 2019). (E) Long-term cycling performance of the L-FTO//AC quasi-solid-state NIC device (at 5 A g−1).