Literature DB >> 32509295

High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials.

Chang Hu1, Xianjie Wang1, Bo Song2.   

Abstract

Two-dimensionpan>al (2D) materials such as graphene and transition-metal chalcogenides have been extensively studied because of their superior electronic and optical properties. Recently, 2D materials have shown great practical application in position-sensitive detectors (PSDs), originating from the lateral photoelectrical effect of the materials or junctions. The high position sensitivity and ultrafast photoresponse of PSDs based on 2D materials, especially compatibility with Si technology, may enable diverse optoelectronic applications. In this review, recent studies of PSDs based on 2D materials are summarized, providing a promising route for high-performance PSDs.
© The Author(s) 2020.

Entities:  

Keywords:  Optical sensors; Optics and photonics

Year:  2020        PMID: 32509295      PMCID: PMC7239919          DOI: 10.1038/s41377-020-0307-y

Source DB:  PubMed          Journal:  Light Sci Appl        ISSN: 2047-7538            Impact factor:   17.782


  28 in total

1.  Hysteresis in single-layer MoS2 field effect transistors.

Authors:  Dattatray J Late; Bin Liu; H S S Ramakrishna Matte; Vinayak P Dravid; C N R Rao
Journal:  ACS Nano       Date:  2012-05-23       Impact factor: 15.881

2.  Origin of the Ultrafast Response of the Lateral Photovoltaic Effect in Amorphous MoS2/Si Junctions.

Authors:  Chang Hu; Xianjie Wang; Peng Miao; Lingli Zhang; Bingqian Song; Weilong Liu; Zhe Lv; Yu Zhang; Yu Sui; Jinke Tang; Yanqiang Yang; Bo Song; Ping Xu
Journal:  ACS Appl Mater Interfaces       Date:  2017-05-16       Impact factor: 9.229

3.  Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films.

Authors:  Biao Zhang; Liang Du; Hui Wang
Journal:  Opt Express       Date:  2014-01-27       Impact factor: 3.894

4.  Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

Authors:  Sungjin Wi; Hyunsoo Kim; Mikai Chen; Hongsuk Nam; L Jay Guo; Edgar Meyhofer; Xiaogan Liang
Journal:  ACS Nano       Date:  2014-05-05       Impact factor: 15.881

5.  Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions.

Authors:  Shuang Qiao; Bin Zhang; Kaiyu Feng; Ridong Cong; Wei Yu; Guangsheng Fu; Shufang Wang
Journal:  ACS Appl Mater Interfaces       Date:  2017-05-18       Impact factor: 9.229

6.  Lateral photovoltaic effect and electron transport observed in Cr nano-film.

Authors:  Shuai Liu; Xin Xie; Hui Wang
Journal:  Opt Express       Date:  2014-05-19       Impact factor: 3.894

7.  Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS2/Si Heterojunction.

Authors:  Ridong Cong; Shuang Qiao; Jihong Liu; Jiansong Mi; Wei Yu; Baolai Liang; Guangsheng Fu; Caofeng Pan; Shufang Wang
Journal:  Adv Sci (Weinh)       Date:  2017-12-01       Impact factor: 16.806

8.  Perovskite/organic-semiconductor heterojunctions for ultrasensitive photodetection.

Authors:  Leilei Gu; Zhiyong Fan
Journal:  Light Sci Appl       Date:  2017-08-11       Impact factor: 17.782

9.  Angle-selective perfect absorption with two-dimensional materials.

Authors:  Linxiao Zhu; Fengyuan Liu; Hongtao Lin; Juejun Hu; Zongfu Yu; Xinran Wang; Shanhui Fan
Journal:  Light Sci Appl       Date:  2016-03-25       Impact factor: 17.782

10.  Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions.

Authors:  Chao Xie; Peng You; Zhike Liu; Li Li; Feng Yan
Journal:  Light Sci Appl       Date:  2017-08-11       Impact factor: 17.782

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  2 in total

1.  Mechanism for hydrogen evolution from water splitting based on a MoS2/WSe2 heterojunction photocatalyst: a first-principle study.

Authors:  Yazhou Wang; Tong Liu; Weizhi Tian; Ying Zhang; Pengyue Shan; Yunjian Chen; Wanhang Wei; Hongkuan Yuan; Hong Cui
Journal:  RSC Adv       Date:  2020-11-11       Impact factor: 4.036

2.  Enhanced Lateral Photovoltaic Effects in n-Si/SiO2/PEDOT:PSS Structures.

Authors:  Jingying Zhang; Kang Meng; Gang Ni
Journal:  Polymers (Basel)       Date:  2022-03-31       Impact factor: 4.329

  2 in total

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